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2SK3434 датащи(PDF) 3 Page - Renesas Technology Corp

номер детали 2SK3434
подробное описание детали  MOS FIELD EFFECT TRANSISTOR
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производитель  RENESAS [Renesas Technology Corp]
домашняя страница  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

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©
1999, 2001
MOS FIELD EFFECT TRANSISTOR
2SK3434
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No.
D14603EJ3V0DS00 (3rd edition)
Date Published
July 2002 NS CP(K)
Printed in Japan
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The mark 5 shows major revised points.
DESCRIPTION
The 2SK3434 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
• Super low on-state resistance
RDS(on)1 = 20 m
Ω MAX. (VGS = 10 V, ID = 24 A)
RDS(on)2 = 31 m
Ω MAX. (VGS = 4.0 V, ID = 24 A)
• Low Ciss: Ciss = 2100 pF TYP.
• Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
60
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±48
A
Drain Current (pulse)
Note1
ID(pulse)
±120
A
Total Power Dissipation (TC = 25°C)
PT
56
W
Total Power Dissipation (TA = 25°C)
PT
1.5
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
−55 to +150
°C
Single Avalanche Current
Note2
IAS
28
A
Single Avalanche Energy
Note2
EAS
78
mJ
Notes 1. PW
≤ 10
µs, Duty cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 30 V, RG = 25
Ω, VGS = 20
→ 0 V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3434
TO-220AB
2SK3434-S
TO-262
2SK3434-ZJ
TO-263
2SK3434-Z
TO-220SMD
Note
Note TO-220SMD package is produced only
in Japan.
(TO-220AB)
(TO-262)
(TO-263, TO-220SMD)


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