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2SJ673 датащи(PDF) 3 Page - Renesas Technology Corp |
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2SJ673 датащи(HTML) 3 Page - Renesas Technology Corp |
3 / 10 page The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. MOS FIELD EFFECT TRANSISTOR 2SJ673 SWITCHING P-CHANNEL POWER MOS FET DATA SHEET Document No. D17210EJ1V0DS00 (1st edition) Date Published June 2004 NS CP(K) Printed in Japan 2004 DESCRIPTION The 2SJ673 is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 20 m Ω MAX. (VGS = −10 V, ID = −18 A) RDS(on)2 = 31 m Ω MAX. (VGS = −4.0 V, ID = −18 A) • Low Ciss: Ciss = 4600 pF TYP. • Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS −60 V Gate to Source Voltage (VDS = 0 V) VGSS m20 V Drain Current (DC) (TC = 25°C) ID(DC) m36 A Drain Current (pulse) Note1 ID(pulse) m144 A Total Power Dissipation (TC = 25°C) PT1 32 W Total Power Dissipation (TA = 25°C) PT2 2.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg −55 to +150 °C Single Avalanche Current Note2 IAS −36 A Single Avalanche Energy Note2 EAS 130 mJ Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = −30 V, RG = 25 Ω, VGS = 20 → 0 V ORDERING INFORMATION PART NUMBER PACKAGE 2SJ673 Isolated TO-220 (MP-45F) (Isolated TO-220) |
Аналогичный номер детали - 2SJ673_15 |
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Аналогичное описание - 2SJ673_15 |
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