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UF28100V датащи(PDF) 1 Page - M/A-COM Technology Solutions, Inc.

номер детали UF28100V
подробное описание детали  RF Power MOSFET Transistor
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производитель  MA-COM [M/A-COM Technology Solutions, Inc.]
домашняя страница  http://www.macomtech.com
Logo MA-COM - M/A-COM Technology Solutions, Inc.

UF28100V датащи(HTML) 1 Page - M/A-COM Technology Solutions, Inc.

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• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for development. Performance is based on target specifications, simulated results, and/or
prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under development. Performance is based on engineering tests. Specifications are typical. Mechanical
outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed.
RELEASED: In full production, samples readily available, standard lead times apply.
RF Power MOSFET Transistor
100W, 100-500 MHz, 28V
M/A-COM Products
Released; RoHS Compliant
UF28100V
M/A-COM Technology Solutions reserves the right to make changes to the product(s) or informa-
tion contained herein without notice. M/A-COM makes no warranty, representation or guarantee
regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any
liability whatsoever arising out of the use or application of any product(s) or information.
Features
N-channel enhancement mode device
DMOS structure
Lower capacitances for broadband operation
High saturated output power
Lower noise figure than competitive devices
ABSOLUTE MAXIMUM RATINGS AT 25° C
Parameter
Rating
Drain-Source Voltage
65
Gate-Source Voltage
20
Drain-Source Current
12*
Power Dissipation
250
Junction Temperature
200
Storage Temperature
-55 to +150
Thermal Resistance
0.7
Symbol
VDS
VGS
IDS
PD
TJ
TSTG
θJC
Units
V
V
A
W
°C
°C
°C/W
ELECTRICAL CHARACTERISTICS AT 25°C
Parameter
Symbol
Min
Max
Units
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
65
-
V
VGS = 0.0 V , IDS = 15.0 mA
Drain-Source Leakage Current
IDSS
-
3.0
mA
VGS = 28.0 V , VGS = 0.0 V
Gate-Source Leakage Current
IGSS
-
3.0
µA
VGS = 20.0 V , VDS = 0.0 V
Gate Threshold Voltage
VGS(TH)
2.0
6.0
V
VDS = 10.0 V , IDS = 300.0 mA
Forward Transconductance
GM
1.5
-
S
VDS = 10.0 V , IDS 3000.0 mA , Δ VGS = 1.0V, 80 μs Pulse
Input Capacitance
CISS
-
135
pF
VDS = 28.0 V , F = 1.0 MHz
Output Capacitance
COSS
-
90
pF
VDS = 28.0 V , F = 1.0 MHz
Reverse Capacitance
CRSS
-
24
pF
VDS = 28.0 V , F = 1.0 MHz
Power Gain
GP
10
-
dB
VDD = 28.0 V, IDQ = 600.0 mA, POUT = 100.0 W F =500 MHz
Drain Efficiency
ŋD
50
-
%
VDD = 28.0 V, IDQ = 600.0 mA, POUT = 100.0 W F =500 MHz
Load Mismatch Tolerance
VSWR-T
-
30:1
-
VDD = 28.0 V, IDQ = 600.0 mA, POUT = 100.0 W F =500 MHz
Return Loss
RL
10
-
dB
VDD = 28.0 V, IDQ = 600.0 mA, POUT = 100.0 W F =500 MHz
F (MHz)
ZIN (Ω)
ZLOAD (Ω)
100
4.5-j6.0
14.5+j0.5
300
2.25-j1.75
7.5j1.0
500
1.5+j5.5
3.5+j3.5
VDD=28V, IDQ=600 Ma, POUT =100.0 W
TYPICAL DEVICE IMPEDANCES
ZIN is the series equivalent input impedance of the device
from gate to gate.
ZLOAD is the optimum series equivalent load impedance as
measured from drain to drain.
*Per side


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