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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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KTA702E датащи(PDF) 1 Page - KEC(Korea Electronics) |
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KTA702E датащи(HTML) 1 Page - KEC(Korea Electronics) |
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1 / 3 page  2002. 2. 20 1/3 SEMICONDUCTOR TECHNICAL DATA KTA702E EPITAXIAL PLANAR PNP TRANSISTOR Revision No : 1 GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES A Collector Current is Large. Collector Saturation Voltage is low. : VCE(sat) -250mV at IC=-200mA/IB=-10mA. Complementary to KTC802E. MAXIMUM RATINGS (Ta=25 ) DIM MILLIMETERS A A1 B1 C TES6 1.6 0.05 1.0 0.05 1.6 0.05 1.2 0.05 0.50 0.2 0.05 0.5 0.05 0.12 0.05 B D H J B1 B 1 2 3 6 4 P P P5 5 +_ +_ +_ +_ +_ +_ +_ 1. Q EMITTER 2. Q BASE 3. Q COLLECTOR 4. Q EMITTER 5. Q BASE 6. Q COLLECTOR 1 1 1 2 2 2 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -15 V Collector-Emitter Voltage VCEO -12 V Emitter-Base Voltage VEBO -6 V Collector Current IC -500 mA ICP (Note) -1 A Collector Power Dissipation PC * 200 mW Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 1 Q1 Q2 23 65 4 CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-15V, IE=0 - - -100 nA Collector-Base Breakdown Voltage V(BR)CBO IC=-10 A -15 - - V Collector-Emitter Breakdown Voltage V(BR)CEO IC=-1mA -12 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE=-10 A -6 - - V DC Current Gain hFE VCE=-2V, IC=-10mA 270 - 680 - Collector-Emitter Saturation Voltage VCE(sat) IC=-200mA, IB=-10mA - 100 -250 mV Transition Frequency fT VCE=-2V, IC=-10mA, fT=100MHz - 260 - MHz Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 6.5 - pF Note : Single pulse Pw=1mS. * Total Rating. EQUIVALENT CIRCUIT (TOP VIEW) S Z Type Name 12 3 4 6 5 Marking |
Аналогичный номер детали - KTA702E |
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Аналогичное описание - KTA702E |
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