SS10P2CL, SS10P3CL

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Vishay General Semiconductor

Revision: 14-Aug-13

3

Document Number: 89036

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

RATINGS AND CHARACTERISTICS CURVES

Fig. 1 - Maximum Forward Current Derating Curve

Fig. 2 - Forward Power Loss Characteristics Per Diode

Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode

Fig. 4 - Typical Reverse Leakage Characteristics Per Diode

Fig. 5 - Typical Junction Capacitance Per Diode

Fig. 6 - Typical Transient Thermal Impedance Per Diode

0

2

4

6

8

12

10

0

25

50

75

100

125

150

175

Lead Temperature (°C)

Resistive or Inductive Load

T

at the Cathode Band Terminal

0

0.8

0.4

1.2

1.6

2.0

2.4

01

2

3

4

6

Average Forward Current (A)

D = 0.1

D = 0.2

D = 0.3 D = 0.5

D = 0.8

D = 1.0

5

D = t

t

p

T

0.01

0.1

1

10

100

0.2

0.1

0.3

0

0.4

0.5

0.6

0.7

0.9

0.8

Instantaneous Forward Voltage (V)

T

T

T

0.001

0.01

0.1

1

10

1000

100

10

20

30

40

60

50

70

90

80

100

Percent of Rated Peak Reverse Voltage (%)

T

T

T

100

10 000

1000

0.1

1

10

100

Reverse Voltage (V)

T

f = 1.0 MHz

V

0.01

0.1

1

10

100

1

10

100

t - Pulse Duration (s)

Junction to Ambient