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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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TSF40L100C датащи(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSF40L100C датащи(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 5 page  - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ high efficiency - High forward surge capability - Halogen-free according to IEC 61249-2-21 definition Molding compound meets UL 94 V-0 flammability rating Packing code with suffix "G" means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test Mounting torque: 0.56 Nm max. VRRM V dV/dt V/μs TYP MAX TYP MAX TYP MAX TYP MAX IF = 10A 0.60 - 0.67 - 0.77 - 0.80 - IF = 20A 0.72 0.80 0.79 0.85 0.86 0.96 0.88 0.98 IF = 10A 0.54 - 0.58 - 0.64 - 0.67 IF = 20A 0.65 0.73 0.69 0.77 0.74 0.82 0.76 0.84 TJ = 25°C 250 - 250 - 100 - 100 μA TJ = 125°C 10 25 10 25 3 15 3 15 mA RθJC °C/W TJ °C TSTG °C Document Number: DS_D1411083 Version: B14 TJ = 125°C TJ = 25°C 10000 120 150 A ITO-220AB - 55 to +150 - 55 to +150 IR 200 Maximum repetitive peak reverse voltage Maximum average forward rectified current VF Instantaneous forward voltage per diode (Note1) Operating junction temperature range per device Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC per diode TSF40L 200C 200 UNIT 20 100 TYPICAL APPLICATIONS MECHANICAL DATA Case: ITO-220AB Polarity: As marked Trench Schottky barrier rectifier are designed for high frequency miniature switched mode power supplies such as adapters, lighting and on-board DC/DC converters. TSF40L 100C IF(AV) PARAMETER SYMBOL Storage temperature range 40 Weight: 1.7 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) TSF40L 120C Voltage rate of change (Rated VR) TSF40L 150C TSF40L100C thru TSF40L200C Note 1: Pulse test with pulse width=300μs, 1% duty cycle Instantaneous reverse current per diode at rated reverse voltage IFSM A V Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load per diode 3.5 4.5 Typical thermal resistance per diode |
Аналогичный номер детали - TSF40L100C |
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Аналогичное описание - TSF40L100C |
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