поискавой системы для электроныых деталей |
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TSC742 датащи(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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TSC742 датащи(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
2 / 5 page TSC742 Taiwan Semiconductor Document Number: DS_P0000179 2 Version: B15 ELECTRICAL SPECIFICATIONS (T A = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Collector-Base Voltage IC =0.5mA BVCBO 1050 -- -- V Collector-Emitter Breakdown Voltage IC =5mA BVCEO 420 -- -- V Emitter-Base Breakdown Voltage IE =1mA BVEBO 15 -- -- V Collector Cutoff Current VCE =400V, IB=0 ICEO -- 10 250 µA Collector Cutoff Current VCB =950V, IE =0 ICBO -- -- 10 µA Collector-Emitter Saturation Voltage IC=1A, IB =0.2A VCE(SAT)1 --- 0.15 0.5 V Collector-Emitter Saturation Voltage IC=3.5A, IB =1A VCE(SAT)2 --- 1.2 1.5 V Base-Emitter Saturation Voltage IC=3.5A, IB =1A VBE(SAT)1 -- 1.0 1.5 V DC Current Gain VCE =5V, IC = 0.1A hFE1 48 70 100 VCE =3V, IC = 0.8A hFE2 23 28 50 Rise Time (Note 2) VCC =5V, IC =0.5A tr -- -- 1 µs Storage Time (Note 2) tSTG 4.5 5 5.5 µs Fall Time (Note 2) tf -- -- 1.2 µs Repetitive Avalanche Energy L=2mH EAR 6 -- -- mJ Notes: 1. Pulse test: ≤380µs, duty cycle ≤ 2% 2. For DESIGN AID ONLY, not subject to production testing. |
Аналогичный номер детали - TSC742 |
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Аналогичное описание - TSC742 |
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