LESHAN RADIO COMPANY, LTD.

S23–2/2

BAP50-02

10

1

04

8

12

16

20

600

400

200

0

1

10

f = 100 MHz; T

f = 1 MHz; T

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX.

UNIT

τ

L

charge carrier life time

–

1.05

–

µs

Ω;

series inductance

–

0.6

–

nH

Note

1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.

THERMALCHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

thermal resistance from junction to soldering-point

85

K/W

0

-5

-10

-15

-20

-25

f (GHz )

0

-1

-2

-3

-4

-5

0.5

1

1.5

2

2.5

3

f (GHz )

Fig.1 Forward resistance as a function of

forward current; typical values.

Fig.2 Diode capacitance as a function of

reverse voltage; typical values.

0.5

1

1.5

2

2.5

3

I

I

I

Fig.3 Insertion loss ( |s

as a function of frequency; typical values.

Diode inserted in series with a 50

Ω stripline circuit and

biased via the analyzer Tee network.

Tamb =25°C.

Fig.4 Isolation ( |s

function of frequency; typical values.

Diode zero biased and inserted in

series with a 50

Ω stripline circuit.

Tamb =25°C.