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DMC1028UFDB-7 датащи(PDF) 3 Page - Diodes Incorporated |
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DMC1028UFDB-7 датащи(HTML) 3 Page - Diodes Incorporated |
3 / 10 page DMC1028UFDB Document number: DS37634 Rev. 4 - 2 3 of 10 www.diodes.com May 2015 © Diodes Incorporated DMC1028UFDB Electrical Characteristics Q2 P-CHANNEL (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BVDSS -20 - - V VGS = 0V, ID = -250μA Zero Gate Voltage Drain Current TJ = +25°C IDSS - - -1.0 μA VDS = -20V, VGS = 0V Gate-Source Leakage IGSS - - ±10 μA VGS = ±8V, VDS = 0V ON CHARACTERISTICS (Note 6) Gate Threshold Voltage VGS(TH) -0.4 - -1 V VDS = VGS, ID = -250μA Static Drain-Source On-Resistance RDS(ON) - 55 80 m Ω VGS = -4.5V, ID = -3.8A - 63 90 VGS = -3.3V, ID = -3.5A - 70 100 VGS = -2.5V, ID = -3.3A - 88 140 VGS = -1.8V, ID = -1.0A - 110 210 VGS = -1.5V, ID = -0.5A Diode Forward Voltage VSD - -0.7 -1.2 V VGS = 0V, IS = -1A DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Ciss - 576 - pF VDS = -10V, VGS = 0V, f = 1.0MHz Output Capacitance Coss - 87 - pF Reverse Transfer Capacitance Crss - 71 - pF Gate Resistance Rg - 15 - Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = -3.3V) Qg - 5.2 - nC VDS = -10V, ID = -4.9A Total Gate Charge (VGS = -4.5V) - 6.7 - nC Total Gate Charge (VGS = -8V) - 11.5 - nC Gate-Source Charge Qgs - 1.0 - nC Gate-Drain Charge Qgd - 2.0 - nC Turn-On Delay Time tD(ON) - 3.5 - ns VDD = -10V, VGS = -4.5V, RL = 2.6Ω, RG = 1Ω Turn-On Rise Time tR - 3.6 - ns Turn-Off Delay Time tD(OFF) - 20.8 - ns Turn-Off Fall Time tF - 12.7 - ns Body Diode Reverse Recovery Time tRR - 13.1 - ns IS = -3.9A, dI/dt = 100A/μs Body Diode Reverse Recovery Charge QRR - 3.9 - nC IS = -3.9A, dI/dt = 100A/μs Notes: 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. |
Аналогичный номер детали - DMC1028UFDB-7 |
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Аналогичное описание - DMC1028UFDB-7 |
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