DMC2041UFDB

Document number: DS37420 Rev. 2 - 2

3 of 9

www.diodes.com

February 2015

© Diodes Incorporated

DMC2041UFDB

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage

-20

—

—

V

—

—

-1.0

μA

Gate-Source Leakage

—

—

±10

μA

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage

-0.35

—

-1.4

V

Static Drain-Source On-Resistance

—

59

90

mΩ

—

76

137

Diode Forward Voltage

—

-0.65

-1.2

V

DYNAMIC CHARACTERISTICS (Note 7)

Input Capacitance

—

881

—

pF

f = 1.0MHz

Output Capacitance

—

84

—

pF

Reverse Transfer Capacitance

—

67

—

pF

Gate Resistance

—

14.3

—

Ω

—

11

—

nC

—

18

—

nC

Gate-Source Charge

—

1.5

—

nC

Gate-Drain Charge

—

2.3

—

nC

Turn-On Delay Time

—

5.0

—

ns

Turn-On Rise Time

—

9.5

—

ns

Turn-Off Delay Time

—

29.7

—

ns

Turn-Off Fall Time

—

20.4

—

ns

Body Diode Reverse Recovery Time

trr

—

23.6

—

nS

Body Diode Reverse Recovery Charge

Qrr

—

11.4

—

nC

Notes:

6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to product testing.

V

, DRAIN-SOURCE VOLTAGE (V)

Figure 1 Typical Output Characteristics

DS

0

2

4

6

8

10

12

14

16

18

20

0

0.5

1

1.5

2

2.5

3

V

= 1.0V

GS

V

= 1.5V

GS

V

= 3.0V

GS

V

= 4.5V

GS

V

= 8.0V

GS

V

= 2.0V

GS

V

= 2.5V

GS

V

, GATE-SOURCE VOLTAGE (V)

GS

Figure 2 Typical Transfer Characteristics

0

2

4

6

8

10

12

14

16

18

20

0

0.5

1

1.5

2

V

= 5.0V

DS

T = 150°C

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A