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DMC2990UDJ датащи(PDF) 2 Page - Diodes Incorporated

номер детали DMC2990UDJ
подробное описание детали  COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
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DMC2990UDJ датащи(HTML) 2 Page - Diodes Incorporated

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DMC2990UDJ
Document number: DS35481 Rev. 9 - 2
2 of 9
www.diodes.com
March 2013
© Diodes Incorporated
DMC2990UDJ
Maximum Ratings Q1 N-CHANNEL (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
20
V
Gate-Source Voltage
VGSS
±8
V
Continuous Drain Current (Note 7) VGS = 4.5V
Steady
State
TA = +25°C
TA = +70C
ID
450
350
mA
t<5s
TA = +25C
TA = +70C
ID
520
410
mA
Continuous Drain Current (Note 7) VGS = 1.8V
Steady
State
TA = +25C
TA = +70C
ID
330
260
mA
t<5s
TA = +25C
TA = +70C
ID
390
310
mA
Maximum Continuous Body Diode Forward Current (Note 7)
IS
440
mA
Pulsed Drain Current (Note 8)
IDM
800
mA
Maximum Ratings Q2 P-CHANNEL (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
-20
V
Gate-Source Voltage
VGSS
±8
V
Continuous Drain Current (Note 5) VGS = -4.5V
Steady
State
TA = +25C
TA = +70C
ID
-310
-240
mA
t<5s
TA = +25C
TA = +70C
ID
-360
-280
mA
Continuous Drain Current (Note 5) VGS = -1.8V
Steady
State
TA = +25C
TA = +70C
ID
-240
-190
mA
t<5s
TA = +25C
TA = +70C
ID
-280
-220
mA
Maximum Continuous Body Diode Forward Current (Note 7)
IS
-440
mA
Pulsed Drain Current (Note 8)
IDM
-800
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 7)
PD
350
mW
Thermal Resistance, Junction to Ambient (Note 7)
Steady State
RθJA
360
°C/W
t<5s
270
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Notes:
7. Device mounted on FR-4 PCB, with minimum recommended pad layout.
8. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%.


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