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DMC3400SDW-13 датащи(PDF) 7 Page - Diodes Incorporated

номер детали DMC3400SDW-13
подробное описание детали  COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMC3400SDW-13 датащи(HTML) 7 Page - Diodes Incorporated

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DMC3400SDW
Document number: DS37690 Rev. 1 - 2
7 of 9
www.diodes.com
February 2015
© Diodes Incorporated
DMC3400SDW
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
-50
-25
0
25
50
75
100
125
150
T
J, JUNCTION TEMPERATURE (℃)
Figure 19. On-Resistance Variation with Temperature
V
GS=-10V, ID=-420mA
V
GS=-4.5V, ID=-200mA
1
1.2
1.4
1.6
1.8
2
-50
-25
0
25
50
75
100
125
150
T
J, JUNCTION TEMPERATURE (℃)
Figure 20. Gate Theshold Variation vs. Junction
Temperature
I
D=-250µA
I
D=-1mA
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
0
0.3
0.6
0.9
1.2
1.5
V
SD, SOURCE-DRAIN VOLTAGE (V)
Figure 21. Diode Forward Voltage vs. Current
T
A=-55℃
T
A=25℃
T
A=85℃
T
A=125℃
T
A=150℃
V
GS=0V
1
10
100
0
5
10
15
20
25
30
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 22. Typical Junction Capacitance
f=1MHz
Ciss
Coss
Crss
0
2
4
6
8
10
0
0.3
0.6
0.9
1.2
1.5
Qg (nC)
Figure 23. Gate Charge
V
DS=-10V, ID=-0.24A
0.001
0.01
0.1
1
10
0.1
1
10
100
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 24. SOA, Safe Operation Area
T
J(Max)=150℃
T
A=25℃
V
GS=10V
Single Pulse
DUT on 1*MRP Board
R
DS(ON)
Limited
DC
P
W=10s
P
W=1s
P
W=100ms
P
W=10ms
P
W=1ms
P
W=100µs


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