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DMG9N65CTI датащи(PDF) 2 Page - Diodes Incorporated |
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DMG9N65CTI датащи(HTML) 2 Page - Diodes Incorporated |
2 / 5 page DMG9N65CTI Document number: DS36027 Rev. 4 - 2 2 of 5 www.diodes.com February 2015 © Diodes Incorporated DMG9N65CTI Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±30 V Continuous Drain Current (Notes 5 & 6) VGS = 10V Steady State TC = +25°C TC = +70°C ID 9.0 7.0 A Pulsed Drain Current (Note 7) 10µs pulse, pulse duty cycle<=1% IDM 30 A Avalanche Current (Note 8) VDD = 100V, VGS = 10V, L = 60mH IAR 2.7 A Repetitive avalanche energy (Note 8) VDD = 100V, VGS = 10V, L = 60mH EAR 260 mJ Thermal Characteristics Characteristic Symbol Max Unit Power Dissipation (Note 5) TC = +25°C TC = +70°C PD 13 8 W Thermal Resistance, Junction to Case (Note 5) TC = +25°C RθJC 8.84 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage BVDSS 650 - - V VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current TJ = +25°C IDSS - - 1.0 µA VDS = 650V, VGS = 0V Gate-Source Leakage IGSS - - ±100 nA VGS = ±30V, VDS = 0V ON CHARACTERISTICS (Note 9) Gate Threshold Voltage VGS(th) 3 - 5 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS (ON) - 0.7 1.3 Ω VGS = 10V, ID = 4.5A Forward Transfer Admittance |Yfs| - 8.5 - S VDS = 40V, ID = 4.5A Diode Forward Voltage VSD - 0.7 1.0 V VGS = 0V, IS = 1A DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Ciss - 2310 - pF VDS = 25V, VGS = 0V, f = 1.0MHz Output Capacitance Coss - 122 - Reverse Transfer Capacitance Crss - 2.2 - Gate Resistance Rg - 2.2 - Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge VGS = 10V Qg - 39 - nC VGS = 10V, VDS = 520V, ID = 8A Gate-Source Charge Qgs - 8.5 - Gate-Drain Charge Qgd - 11.9 - Turn-On Delay Time tD(on) - 39 - ns VGS = 10V, VDS = 325V, RG = 25Ω, ID = 8A Turn-On Rise Time tr - 29 - ns Turn-Off Delay Time tD(off) - 122 - ns Turn-Off Fall Time tf - 28 - ns Body Diode Reverse Recovery Time trr - 570 - ns dI/dt = 100A/µs, VDS = 100V, IF = 8A Body Diode Reverse Recovery Charge Qrr - 4.17 - µC Notes: 5. Device mounted on an infinite heatsink. 6. Drain current limited by maximum junction temperature. 7. Repetitive rating, pulse width limited by junction temperature. 8. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = +25°C. 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to production testing. |
Аналогичный номер детали - DMG9N65CTI_15 |
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Аналогичное описание - DMG9N65CTI_15 |
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