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DMG9N65CTI датащи(PDF) 2 Page - Diodes Incorporated

номер детали DMG9N65CTI
подробное описание детали  N-CHANNEL ENHANCEMENT MODE MOSFET
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
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DMG9N65CTI датащи(HTML) 2 Page - Diodes Incorporated

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DMG9N65CTI
Document number: DS36027 Rev. 4 - 2
2 of 5
www.diodes.com
February 2015
© Diodes Incorporated
DMG9N65CTI
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
650
V
Gate-Source Voltage
VGSS
±30
V
Continuous Drain Current (Notes 5 & 6)
VGS = 10V
Steady
State
TC = +25°C
TC = +70°C
ID
9.0
7.0
A
Pulsed Drain Current (Note 7) 10µs pulse, pulse duty cycle<=1%
IDM
30
A
Avalanche Current (Note 8) VDD = 100V, VGS = 10V, L = 60mH
IAR
2.7
A
Repetitive avalanche energy (Note 8) VDD = 100V, VGS = 10V, L = 60mH
EAR
260
mJ
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Power Dissipation (Note 5)
TC = +25°C
TC = +70°C
PD
13
8
W
Thermal Resistance, Junction to Case (Note 5)
TC = +25°C
RθJC
8.84
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
BVDSS
650
-
-
V
VGS = 0V, ID = 250µA
Zero Gate Voltage Drain Current TJ = +25°C
IDSS
-
-
1.0
µA
VDS = 650V, VGS = 0V
Gate-Source Leakage
IGSS
-
-
±100
nA
VGS = ±30V, VDS = 0V
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
VGS(th)
3
-
5
V
VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance
RDS (ON)
-
0.7
1.3
Ω
VGS = 10V, ID = 4.5A
Forward Transfer Admittance
|Yfs|
-
8.5
-
S
VDS = 40V, ID = 4.5A
Diode Forward Voltage
VSD
-
0.7
1.0
V
VGS = 0V, IS = 1A
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Ciss
-
2310
-
pF
VDS = 25V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Coss
-
122
-
Reverse Transfer Capacitance
Crss
-
2.2
-
Gate Resistance
Rg
-
2.2
-
Ω
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge VGS = 10V
Qg
-
39
-
nC
VGS = 10V, VDS = 520V,
ID = 8A
Gate-Source Charge
Qgs
-
8.5
-
Gate-Drain Charge
Qgd
-
11.9
-
Turn-On Delay Time
tD(on)
-
39
-
ns
VGS = 10V, VDS = 325V,
RG = 25Ω, ID = 8A
Turn-On Rise Time
tr
-
29
-
ns
Turn-Off Delay Time
tD(off)
-
122
-
ns
Turn-Off Fall Time
tf
-
28
-
ns
Body Diode Reverse Recovery Time
trr
-
570
-
ns
dI/dt = 100A/µs, VDS = 100V,
IF = 8A
Body Diode Reverse Recovery Charge
Qrr
-
4.17
-
µC
Notes:
5. Device mounted on an infinite heatsink.
6. Drain current limited by maximum junction temperature.
7. Repetitive rating, pulse width limited by junction temperature.
8. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = +25°C.
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to production testing.


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