DMG3418L

Document number: DS36366 Rev. 3 - 2

4 of 5

www.diodes.com

March 2014

© Diodes Incorporated

DMG3418L

T , JUNCTION TEMPERATURE ( C)

Figure 7 Gate Threshold Variation vs. Ambient Temperature

J

°

-50

-25

0

25

50

75

100 125

150

0

0.4

0.8

1.2

1.6

2

I= 1mA

D

I = 250µA

D

V , SOURCE-DRAIN VOLTAGE (V)

SD

Figure 8 Diode Forward Voltage vs. Current

0

2

4

6

8

10

12

14

16

18

20

0

0.3

0.6

0.9

1.2

1.5

T= 25°C

A

V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 9 Typical Junction Capacitance

10

100

1,000

f = 1MHz

0

5

10

15

20

25

30

Q(nC)

Figure 10 Gate Charge

0

2

4

6

8

10

02

468

10

12

V

= 15V

I= A

DS

D

4

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

SOT23

Dim

Min

Max

Typ

A

0.37

0.51

0.40

B

1.20

1.40

1.30

C

2.30

2.50

2.40

D

0.89

1.03

0.915

F

0.45

0.60

0.535

G

1.78

2.05

1.83

H

2.80

3.00

2.90

J

0.013

0.10

0.05

K

0.903

1.10

1.00

K1

-

-

0.400

L

0.45

0.61

0.55

M

0.085

0.18

0.11

α

0°

8°

-

All Dimensions in mm

A

M

J

L

D

F

B C

H

K

G

K1