DMG4822SSD

Document number: DS35403 Rev. 2 - 2

2 of 7

www.diodes.com

February 2014

© Diodes Incorporated

DMG4822SSD

Characteristic

Symbol

Value

Units

Drain-Source Voltage

30

V

Gate-Source Voltage

±25

V

Steady

State

10

6.6

A

Pulsed Drain Current (Note 6)

60

A

Avalanche Current (Note 7 & 8)

1.68

A

Repetitive Avalanche Energy L= 0.3mH (Note 7 & 8)

12.8

mJ

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

1.42

W

Thermal Resistance, Junction to Ambient (Note 5)

88.4

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 9)

Drain-Source Breakdown Voltage

30

-

-

V

Zero Gate Voltage Drain Current

-

-

1

μA

Gate-Source Leakage

-

-

±100

nA

ON CHARACTERISTICS (Note 9)

Gate Threshold Voltage

1

-

3

V

Static Drain-Source On-Resistance

-

13.4

20

mΩ

-

19.5

31

Forward Transfer Admittance

-

20

-

mS

Diode Forward Voltage

-

0.4

1.0

V

DYNAMIC CHARACTERISTICS (Note 10)

Input Capacitance

-

478.9

-

pF

f = 1MHz

Output Capacitance

-

96.7

-

pF

Reverse Transfer Capacitance

-

61.4

-

pF

Gate resistance

1.1

Ω

5

-

nC

-

10.5

-

nC

Gate-Source Charge

-

1.8

-

nC

Gate-Drain Charge

-

1.6

-

nC

Turn-On Delay Time

-

2.9

-

ns

Turn-On Rise Time

-

7.9

-

ns

Turn-Off Delay Time

-

14.6

-

ns

Turn-Off Fall Time

-

3.1

-

ns

Notes:

5. Device mounted on FR-4 PCB, with minimum recommended pad layout.

6. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%

7. Repetitive rating, pulse width limited by junction temperature.

9. Short duration pulse test used to minimize self-heating effect.

10. Guaranteed by design. Not subject to product testing.