KMA3D6N20SA_15 datasheet(2/5 Pages) KEC

номер детали	KMA3D6N20SA

подробное описание детали	N-Ch Trench MOSFET

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производитель	KEC [KEC(Korea Electronics)]

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2 / 5 page

2012. 8. 22

2/5

KMA3D6N20SA

Revision No : 2

ELECTRICAL CHARACTERISTICS (Ta=25

℃)

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

BVDSS

IDS=250μ

A, VGS=0V,

20

-

V

Drain Cut-off Current

IDSS

VGS=0V, VDS=16V

-

1

μA

Gate Leakage Current

IGSS

VGS=±10V, VDS=0V

-

±100

nA

Gate Threshold Voltage

Vth

VDS=VGS, ID=250μ

A

0.6

0.9

1.5

V

Drain-Source ON Resistance

RDS(ON)*

VGS=4.5V, ID=2.5A

-

32

45

m

Ω

VGS=2.5V, ID=2A

-

50

65

On-State Drain Current

ID(ON)*

VGS=4.5V, VDS=5V

10

-

A

Forward Transconductance

gfs*

VDS=5V, ID=3A

-

8

-

S

Dynamic

Input Capaclitance

Ciss

VDS=15V, VGS= 0V, f=1MHz,

-

437

-

pF

Ouput Capacitance

Coss

-

87

-

Reverse Transfer Capacitance

Crss

-

51

-

Total Gate Charge

Qg*

VDS=10V, VGS=4.5V, ID=3.5A

-

6.6

-

nC

Gate-Source Charge

Qgs*

-

0.8

-

Gate-Drain Charge

Qgd*

-

1.85

-

Turn-On Delay Time

td(on)*

VDD=10V, VGS=4.5V

ID=1A, RG=6Ω(NOTE 1)

-

13

-

ns

Turn-On Rise Time

tr*

-

19

-

Turn-Off Delay Time

td(off)*

-

85

-

Turn-Off Fall Time

tf*

-

47

-

Source-Drain Diode Ratings

Source-Drain Forward Voltage

VSDF*

VGS=0V, IDR=1.25A

-

0.81

1.2

V

NOTE 1> * : Pulse Test : Pulse width <300

㎲ , Duty cycle < 2%

Аналогичный номер детали - KMA3D6N20SA_15

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KEC(Korea Electronics)	KMA3D6N20SA	705Kb / 5P	This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

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Аналогичное описание - KMA3D6N20SA_15

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