поискавой системы для электроныых деталей
  Russian  ▼
ALLDATASHEETRU.COM

X  

IRF6637PBF датащи(PDF) 2 Page - International Rectifier

номер детали IRF6637PBF
подробное описание детали  Low Conduction Losses and Switching Losses
Download  10 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
производитель  IRF [International Rectifier]
домашняя страница  http://www.irf.com
Logo IRF - International Rectifier

IRF6637PBF датащи(HTML) 2 Page - International Rectifier

  IRF6637PBF Datasheet HTML 1Page - International Rectifier IRF6637PBF Datasheet HTML 2Page - International Rectifier IRF6637PBF Datasheet HTML 3Page - International Rectifier IRF6637PBF Datasheet HTML 4Page - International Rectifier IRF6637PBF Datasheet HTML 5Page - International Rectifier IRF6637PBF Datasheet HTML 6Page - International Rectifier IRF6637PBF Datasheet HTML 7Page - International Rectifier IRF6637PBF Datasheet HTML 8Page - International Rectifier IRF6637PBF Datasheet HTML 9Page - International Rectifier Next Button
Zoom Inzoom in Zoom Outzoom out
 2 / 10 page
background image
IRF6637PbF
2
www.irf.com
… Repetitive rating; pulse width limited by max. junction temperature.
‡ Pulse width ≤ 400µs; duty cycle ≤ 2%.
Notes:
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
30
–––
–––
V
∆ΒVDSS/∆TJ
Breakdown Voltage Temp. Coefficient
–––
26
––– mV/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
5.7
7.7
m
–––
8.2
10.8
VGS(th)
Gate Threshold Voltage
1.35
1.8
2.35
V
∆VGS(th)/∆TJ
Gate Threshold Voltage Coefficient
–––
-5.4
––– mV/°C
IDSS
Drain-to-Source Leakage Current
–––
–––
1.0
µA
–––
–––
150
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
Gate-to-Source Reverse Leakage
–––
–––
-100
gfs
Forward Transconductance
38
–––
–––
S
Qg
Total Gate Charge
–––
11
17
Qgs1
Pre-Vth Gate-to-Source Charge
–––
3.1
–––
Qgs2
Post-Vth Gate-to-Source Charge
–––
1.0
–––
nC
Qgd
Gate-to-Drain Charge
–––
4.0
6.0
Qgodr
Gate Charge Overdrive
–––
2.9
–––
See Fig. 15
Qsw
Switch Charge (Qgs2 + Qgd)
–––
5.0
–––
Qoss
Output Charge
–––
9.9
–––
nC
RG
Gate Resistance
–––
1.2
–––
td(on)
Turn-On Delay Time
–––
12
–––
tr
Rise Time
–––
15
–––
td(off)
Turn-Off Delay Time
–––
14
–––
ns
tf
Fall Time
–––
3.8
–––
Ciss
Input Capacitance
–––
1330
–––
Coss
Output Capacitance
–––
430
–––
pF
Crss
Reverse Transfer Capacitance
–––
150
–––
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
–––
53
(Body Diode)
A
ISM
Pulsed Source Current
–––
–––
110
(Body Diode)
g
VSD
Diode Forward Voltage
–––
–––
1.0
V
trr
Reverse Recovery Time
–––
13
20
ns
Qrr
Reverse Recovery Charge
–––
20
30
nC
MOSFET symbol
Clamped Inductive Load
VDS = 15V, ID = 11A
Conditions
ƒ = 1.0MHz
VDS = 16V, VGS = 0V
VGS = 20V
VGS = -20V
VDS = 24V, VGS = 0V
VDS = 15V
VDS = 24V, VGS = 0V, TJ = 125°C
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 14A
i
VGS = 4.5V, ID = 11A
i
VDS = VGS, ID = 250µA
TJ = 25°C, IF = 11A
VGS = 4.5V
ID = 11A
VGS = 0V
VDS = 15V
ID = 11A
VDD = 16V, VGS = 4.5V
i
di/dt = 500A/µs
i
TJ = 25°C, IS = 11A, VGS = 0V
i
showing the
integral reverse
p-n junction diode.


Аналогичный номер детали - IRF6637PBF

производительномер деталидатащиподробное описание детали
logo
International Rectifier
IRF6637PBF IRF-IRF6637PBF Datasheet
270Kb / 10P
   DirectFETPower MOSFET
More results

Аналогичное описание - IRF6637PBF

производительномер деталидатащиподробное описание детали
logo
International Rectifier
IRF6633APBF IRF-IRF6633APBF_15 Datasheet
268Kb / 9P
   Low Conduction Losses and Switching Losses
IRF6633PBF IRF-IRF6633PBF_15 Datasheet
283Kb / 10P
   Low Conduction Losses and Switching Losses
IRF6631PBF IRF-IRF6631PBF_15 Datasheet
253Kb / 10P
   Low Switching and Conduction Losses
logo
Vishay Siliconix
VS-GA100TS120UPBF VISHAY-VS-GA100TS120UPBF Datasheet
263Kb / 10P
   Very low conduction and switching losses
Revision: 26-Mar-12
logo
International Rectifier
IRF6609TR1 IRF-IRF6609TR1 Datasheet
264Kb / 11P
   Low Conduction Losses
logo
STMicroelectronics
STTH6010-Y STMICROELECTRONICS-STTH6010-Y Datasheet
210Kb / 9P
   Very low conduction and switching losses
April 2015 Rev 2
logo
Vishay Siliconix
SIHJ10N60E VISHAY-SIHJ10N60E Datasheet
156Kb / 7P
   Reduced switching and conduction losses
Rev. B, 16-Jan-17
logo
STMicroelectronics
STTH15AC06 STMICROELECTRONICS-STTH15AC06 Datasheet
305Kb / 8P
   Reduces switching and conduction losses
April 2015 Rev 2
logo
Vishay Siliconix
SIHH11N60E VISHAY-SIHH11N60E Datasheet
196Kb / 9P
   Reduced switching and conduction losses
Rev. A, 24-Aug-15
SIHP38N60E VISHAY-SIHP38N60E Datasheet
143Kb / 7P
   Reduced switching and conduction losses
Rev. A, 04-Jul-16
More results


Html Pages

1 2 3 4 5 6 7 8 9 10


датащи скачать

Go To PDF Page


ссылки URL




Конфиденциальность
ALLDATASHEETRU.COM
Вашему бизинису помогли Аллдатащит?  [ DONATE ] 

Что такое Аллдатащит   |   реклама   |   контакт   |   Конфиденциальность   |   обмен ссыками   |   поиск по производителю
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com