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2N4921G датащи(PDF) 5 Page - ON Semiconductor

номер детали 2N4921G
подробное описание детали  Medium-Power Plastic NPN Silicon Transistors
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производитель  ONSEMI [ON Semiconductor]
домашняя страница  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

2N4921G датащи(HTML) 5 Page - ON Semiconductor

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2N4921G, 2N4922G, 2N4923G
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5
1000
2.0
Figure 8. Current Gain
IC, COLLECTOR CURRENT (mA)
10
3.0 5.0
10
20 30
200 300 500
2000
500
200
100
70
Figure 9. Collector Saturation Region
1.0
0.2
IB, BASE CURRENT (mA)
0
0.3
0.5
1.0
2.0
5.0
10
20
50
200
0.8
0.6
0.4
0.2
IC = 0.1 A
TJ = 25°C
0.25 A
0.5 A
1.0 A
700
300
TJ = 150°C
25
°C
-55
°C
VCE = 1.0 V
50
30
20
50
100
1000
3.0
30
100
108
0
Figure 10. Effects of Base−Emitter Resistance
TJ, JUNCTION TEMPERATURE (°C)
30
60
90
120
150
107
105
104
103
VCE = 30 V
IC = 10 x ICES
IC = 2 x ICES
IC ≈ ICES
ICES VALUES
OBTAINED FROM
FIGURE 12
106
1.5
2.0
IC, COLLECTOR CURRENT (mA)
5.0
10
20 30
50
100 200 300
2000
1.2
0.9
0.6
0.3
0
TJ = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
Figure 11. “On” Voltage
3.0
500
1000
VBE @ VCE = 2.0 V
104
-0.2
Figure 12. Collector Cut−Off Region
VBE, BASE-EMITTER VOLTAGE (VOLTS)
103
102
10-1
-0.1
0
+0.1
+0.2
+0.3
+0.4
+0.5
VCE = 30 V
TJ = 150°C
100
°C
25
°C
REVERSE
FORWARD
IC = ICES
+2.5
2.0
Figure 13. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
3.0 5.0
10
20 30
50
100 200
2000
-55
°C to +100°C
+2.0
+1.5
+0.5
0
-0.5
-1.0
-1.5
-2.0
-2.5
qVB FOR VBE
TJ = 100°C to 150°C
*APPLIES FOR IC/IB
hFE @VCE + 1.0 V
2
+1.0
300 500
1000
101
100
10- 2
*
qVC FOR VCE(sat)


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