DMG3415UFY4

Document number: DS31842 Rev. 5 - 2

1 of 6

www.diodes.com

May 2010

© Diodes Incorporated

DMG3415UFY4

P-CHANNEL ENHANCEMENT MODE MOSFET

Features

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Low On-Resistance

•

•

•

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Low Input Capacitance

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Fast Switching Speed

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Low Input/Output Leakage

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Lead Free By Design/RoHS Compliant (Note 1)

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ESD Protected Up To 3kV

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"Green" Device, Halogen and Antimony Free (Note 2)

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Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

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Case: DFN2015H4-3

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Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

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Moisture Sensitivity: Level 1 per J-STD-020

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Terminals: Finish

⎯ Matte Tin over Copper leadframe.

Solderable per MIL-STD-202, Method 208

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Terminals Connections: See Diagram Below

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Marking Information: See Page 4

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Ordering Information: See Page 4

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Weight: 0.008 grams (approximate)

Characteristic

Symbol

Value

Units

Drain-Source Voltage

-16

V

Gate-Source Voltage

±8

V

Continuous Drain Current (Note 3)

Steady

State

-3.0

-2.4

A

Continuous Drain Current (Note 4)

Steady

State

-5.4

-4.3

A

Pulsed Drain Current (Note 5)

-12

A

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 3)

0.40

W

Power Dissipation (Note 4)

1.61

W

250.7

°C/W

77.6

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Notes:

1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

4. Device mounted on FR-4 substrate PC board, 2oz copper, with 1 inch square pad layout.

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout, 10

μs pulse, pulse duty cycle ≤1%

ESD PROTECTED TO 3kV

TOP VIEW

Internal Schematic

BOTTOM VIEW

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