DMG6968UTS

Document number: DS31793 Rev. 5 - 2

2 of 6

www.diodes.com

March 2012

© Diodes Incorporated

DMG6968UTS

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

20

V

Gate-Source Voltage

±12

V

Continuous Drain Current (Note 4)

Steady

State

5.2

3.5

A

Pulsed Drain Current

30

A

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 4)

1.0

W

125

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage

20

-

-

V

Zero Gate Voltage Drain Current

-

-

1.0

μA

Gate-Source Leakage

-

-

10

μA

Gate-Source Breakdown Voltage

±12

-

-

V

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

0.35

-

0.95

V

Static Drain-Source On-Resistance

-

-

-

18

21

26

23

27

34

m

Ω

Forward Transfer Admittance

-

13

-

S

Diode Forward Voltage

-

0.7

1.0

V

DYNAMIC CHARACTERISTICS

Input Capacitance

-

143

-

pF

Output Capacitance

-

74

-

pF

Reverse Transfer Capacitance

-

29

-

pF

Gate Resistance

-

202

-

Ω

Total Gate Charge

-

8.8

-

nC

Gate-Source Charge

-

1.4

-

nC

Gate-Drain Charge

-

3.0

-

nC

Turn-On Delay Time

-

53

-

ns

Turn-On Rise Time

-

78

-

ns

Turn-Off Delay Time

-

562

-

ns

Turn-Off Fall Time

-

234

-

ns

Notes:

4. Device mounted on FR-4 PCB.

5. Short duration pulse test used to minimize self-heating effect.