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DMG8822UTS датащи(PDF) 1 Page - Diodes Incorporated |
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DMG8822UTS датащи(HTML) 1 Page - Diodes Incorporated |
1 / 6 page DMG8822UTS Document number: DS31798 Rev. 2 - 2 1 of 6 www.diodes.com June 2009 © Diodes Incorporated DMG8822UTS DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features • Low On-Resistance • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Free By Design/RoHS Compliant (Note 3) • "Green" Device (Note 4) • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • Case: TSSOP-8L • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020D • Terminal Connections: See Diagram Below • Marking Information: See Page 4 • Ordering Information: See Page 4 • Weight: 0.039 grams (approximate) Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±8 V Continuous Drain Current (Note 1) Steady State TA = 25°C TA = 70°C ID 4.9 3.9 A Pulsed Drain Current (Note 2) IDM 31 A Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 1) PD 0.87 W Thermal Resistance, Junction to Ambient @TA = 25°C RθJA 143 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 1. Device mounted on FR-4 PCB with minimum recommended pad layout. 2. Repetitive rating, pulse width limited by junction temperature. 3. No purposefully added lead. 4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. TOP VIEW Internal Schematic BOTTOM VIEW Top View Pin Configuration 8 7 6 5 1 2 3 4 D S1 S1 G1 D S2 S2 G2 G1 S1 S2 G2 D1 D2 Please click here to visit our online spice models database. |
Аналогичный номер детали - DMG8822UTS_15 |
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Аналогичное описание - DMG8822UTS_15 |
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