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IRF7807D1PBF датащи(PDF) 2 Page - International Rectifier |
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IRF7807D1PBF датащи(HTML) 2 Page - International Rectifier |
2 / 8 page IRF7807D1PbF 2 www.irf.com Electrical Characteristics Schottky Diode & Body Diode Ratings and Characteristics Repetitive rating; pulse width limited by max. junction temperature. Pulse width ≤ 300 µs; duty cycle ≤ 2%. When mounted on 1 inch square copper board, t < 10 sec. 50% Duty Cycle, Rectangular * Devices are 100% tested to these parameters. Parameter Min Typ Max Units Conditions Diode Forward Voltage V SD 0.5 V T j = 25°C, Is = 1A, VGS =0V 0.39 T j = 125°C, Is = 1A, VGS =0V Reverse Recovery Time trr 51 ns T j = 25°C, Is = 7.0A, VDS = 16V Reverse Recovery Charge Qrr 48 nC di/dt = 100A/µs Forward Turn-On Time t on Intrinsic turn-on time is negligible (turn-on is dominated by L S+LD) Parameter Min Typ Max Units Conditions Drain-to-Source V (BR)DSS 30 V V GS = 0V, ID = 250µA Breakdown Voltage* Static Drain-Source R DS(on) 17 25 m Ω V GS = 4.5V, ID = 7A on Resistance* Gate Threshold Voltage* V GS(th) 1.0 V V DS = VGS,ID = 250µA Drain-Source Leakage I DSS 90 µAV DS = 24V, VGS = 0V Current* 7.2 mA V DS = 24V, VGS = 0V, T j = 125°C Gate-Source Leakage I GSS +/- 100 nA V GS = +/-12V Current* Total Gate Charge Q gsync 10.5 14 V DS<100mV, Synch FET* V GS = 5V, ID = 7A Total Gate Charge Q gcont 12 17 V DS= 16V, Control FET* V GS = 5V, ID = 7A Pre-Vth Q gs1 2.1 V DS = 16V, ID = 7A Gate-Source Charge Post-Vth Q gs2 0.76 nC Gate-Source Charge Gate to Drain Charge Q gd 2.9 Switch Charge* Q SW 3.66 5.2 (Q gs2 + Qgd) Output Charge* Q oss 15.3 18.4 V DS = 16V, VGS = 0 Gate Resistance R g 1.2 Ω |
Аналогичный номер детали - IRF7807D1PBF |
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Аналогичное описание - IRF7807D1PBF |
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