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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRF7862PBF датащи(PDF) 4 Page - International Rectifier |
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IRF7862PBF датащи(HTML) 4 Page - International Rectifier |
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4 / 9 page  IRF7862PbF 4 www.irf.com Fig 8. Maximum Safe Operating Area Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage 1 10 100 VDS, Drain-to-Source Voltage (V) 100 1000 10000 100000 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, C ds SHORTED Crss = Cgd Coss = Cds + Cgd Coss Crss Ciss 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-to-Drain Voltage (V) 1.0 10 100 1000 TJ = 25°C TJ = 150°C VGS = 0V 0.1 1.0 10 100 VDS, Drain-to-Source Voltage (V) 0.1 1 10 100 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) TA = 25°C Tj = 150°C Single Pulse 100µsec 1msec 10msec 0 5 10 15 20 25 30 35 QG, Total Gate Charge (nC) 0.0 1.0 2.0 3.0 4.0 5.0 VDS= 24V VDS= 15V ID= 16A |
Аналогичный номер детали - IRF7862PBF_15 |
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Аналогичное описание - IRF7862PBF_15 |
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