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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRF7910PBF-1 датащи(PDF) 1 Page - International Rectifier |
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IRF7910PBF-1 датащи(HTML) 1 Page - International Rectifier |
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1 / 8 page  HEXFET® Power MOSFET Notes through are on page 8 SO-8 D1 D1 D2 D2 G1 S2 G2 S1 Top View 8 1 2 3 4 5 6 7 IRF7910PbF-1 Applications l High Frequency 3.3V and 5V input Point of-Load Synchronous Buck Converters for Netcom and Computing Applications l Power Management for Netcom, Computing and Portable Applications Thermal Resistance Symbol Parameter Typ. Max. Units RθJL Junction-to-Drain Lead ––– 42 RθJA Junction-to-Ambient ––– 62.5 °C/W Absolute Maximum Ratings Symbol Parameter Max. Units VDS Drain-Source Voltage 12 V VGS Gate-to-Source Voltage ± 12 V ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V 10 ID @ TA = 70°C Continuous Drain Current, VGS @ 4.5V 7.9 A IDM Pulsed Drain Current 79 PD @TA = 25°C Maximum Power Dissipation 2.0 W PD @TA = 70°C Maximum Power Dissipation 1.3 W Linear Derating Factor 16 mW/°C TJ , TSTG Junction and Storage Temperature Range -55 to + 150 °C Form Quantity Tube/Bulk 95 IRF7910PbF-1 Tape and Reel 4000 IRF7910TRPbF-1 Package Type Standard Pack Orderable Part Number IRF7910PbF-1 SO-8 Base Part Number Features Benefits Industry-standard pinout SO-8 Package ⇒ Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmentally Friendlier MSL1, Industrial qualification Increased Reliability VDS 12 V RDS(on) max (@VGS = 4.5V) 15 Qg (typical) 17 nC ID (@TA = 25°C) 10 A mΩ 1 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback November 22, 2013 |
Аналогичный номер детали - IRF7910PBF-1 |
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Аналогичное описание - IRF7910PBF-1 |
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