IRF9389PBF datasheet(4/14 Pages) IRF

номер детали	IRF9389PBF

подробное описание детали	High and low-side MOSFETs in a single package

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производитель	IRF [International Rectifier]

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4 / 14 page

January 14, 2013

4

IRF9389PbF

Fig 6. Typical Gate Charge vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance vs.

Drain-to-Source Voltage

Fig 8. Maximum Safe Operating Area

Fig 7. Typical Source-Drain Diode

Forward Voltage

N-Channel

1

10

100

VDS, Drain-to-Source Voltage (V)

10

100

1000

10000

VGS = 0V,

f = 1 MHZ

Ciss = Cgs + Cgd, C ds SHORTED

Crss = Cgd

Coss = Cds + Cgd

Coss

Crss

Ciss

01

23

45

6

7

8

9

QG, Total Gate Charge (nC)

0.0

2.0

4.0

6.0

8.0

10.0

12.0

14.0

VDS= 24V

VDS= 15V

VDS= 6.0V

ID= 6.8A

0.2

0.4

0.6

0.8

1.0

1.2

1.4

VSD, Source-to-Drain Voltage (V)

0.1

1

10

100

TJ = 25°C

TJ = 150°C

VGS = 0V

0.1

1

10

100

VDS, Drain-to-Source Voltage (V)

0.01

0.1

1

10

100

Tc = 25°C

Tj = 150°C

Single Pulse

1msec

10msec

OPERATION IN THIS AREA

LIMITED BY RDS(on)

100μsec

DC

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