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IRFB4615PBF датащи(PDF) 1 Page - International Rectifier

номер детали IRFB4615PBF
подробное описание детали  High Efficiency Synchronous Rectification in SMPS
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производитель  IRF [International Rectifier]
домашняя страница  http://www.irf.com
Logo IRF - International Rectifier

IRFB4615PBF датащи(HTML) 1 Page - International Rectifier

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09/05/08
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1
HEXFET® Power MOSFET
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
S
D
G
IRFB4615PbF
GD
S
Gate
Drain
Source
TO-220AB
IRFB4615PbF
PD -96171
VDSS
150V
RDS(on) typ.
32m
:
max.
39m
:
ID
35A
Absolute Maximum Ratings
Symbol
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
IDM
Pulsed Drain Current
c
PD @TC = 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
dv/dt
Peak Diode Recovery
e
V/ns
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited)
Single Pulse Avalanche Energy
d
mJ
IAR
Avalanche Current
c
A
EAR
Repetitive Avalanche Energy
f
mJ
Thermal Resistance
Symbol
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case j
–––
1.045
RθCS
Case-to-Sink, Flat, Greased Surface
0.50
RθJA
Junction-to-Ambient (PCB Mount) ij
–––
62
°C/W
°C
A
109
See Fig. 14, 15, 22a, 22b,
144
38
-55 to + 175
± 20
0.96
10lb
xin (1.1Nxm)
300
Max.
35
25
140


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