поискавой системы для электроныых деталей |
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KDS135 датащи(PDF) 1 Page - KEC(Korea Electronics) |
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KDS135 датащи(HTML) 1 Page - KEC(Korea Electronics) |
1 / 2 page 2014. 3. 31 1/2 SEMICONDUCTOR TECHNICAL DATA KDS135 SILICON EPITAXIAL PLANAR DIODE Revision No : 3 High Voltage Switching. FEATURES ・High Reliability. ・Small surface mounting type (USC). MAXIMUM RATING (Ta=25 ℃) ELECTRICAL CHARACTERISTICS (Ta=25 ℃) CHARACTERISTIC SYMBOL RATING UNIT Maximum (Peak) Reverse Voltage VRM 300 V Reverse Voltage VR 250 V Maximum (Peak) Forward Current IFM 300 mA Average Forward Current IO 100 mA Surge Current (10mS) IFSM 2 A Power Dissipation PD* 200 mW Junction Temperature Tj 150 ℃ Storage Temperature Range Tstg -55 ~150 ℃ * Mounted on a glass epoxy circuit board of 20 ×20mm, Pad dimension of 4 ×4mm CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Forward Voltage VF IF=100mA - 1.0 1.2 V Reverse Current IR(1) VR=250V - 0.04 0.2 μA IR(2) VR=300V - - 100 Total Capacitance CT VR=0V, f=1MHz - 1.35 3 pF Reverse Recovery Time trr IR=30mA, IF=30mA - 30 100 nS |
Аналогичный номер детали - KDS135_15 |
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Аналогичное описание - KDS135_15 |
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