поискавой системы для электроныых деталей |
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KDS166F датащи(PDF) 1 Page - KEC(Korea Electronics) |
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KDS166F датащи(HTML) 1 Page - KEC(Korea Electronics) |
1 / 2 page 2006. 1. 13 1/2 SEMICONDUCTOR TECHNICAL DATA KDS166F SILICON EPITAXIAL PLANAR DIODE Revision No : 0 ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES ・Small package : TFSV. ・Low forward voltage. ・Fast reverse recovery time. ・Small total capacitance. MAXIMUM RATING (Ta=25 ℃) ELECTRICAL CHARACTERISTICS (Ta=25 ℃) CHARACTERISTIC SYMBOL RATING UNIT Maximum (Peak) Reverse Voltage VRM 85 V Reverse Voltage VR 80 V Maximum (Peak) Forward Current IFM 300 mA Average Forward Current IO 100 mA Surge Current (10mS) IFSM 2 A Power Dissipation PD * 100 mW Junction Temperature Tj 150 ℃ Storage Temperature Range Tstg -55 ~150 ℃ CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Forward Voltage VF(1) IF=1mA - 0.60 - V VF(2) IF=10mA - 0.72 - VF(3) IF=100mA - 0.90 1.20 Reverse Current IR VR=80V - - 0.5 μA Total Capacitance CT VR=0V, f=1MHz - 0.9 3.0 pF Reverse Recovery Time trr IF=10mA - 1.6 4.0 ns * : Unit rating. Total rating=unit rating × 1.5 |
Аналогичный номер детали - KDS166F_15 |
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Аналогичное описание - KDS166F_15 |
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