BD136G_13 datasheet(2/4 Pages) ONSEMI

номер детали	BD136G

подробное описание детали	Plastic Medium-Power Silicon PNP Transistors

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BD136G, BD138G, BD140G

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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

Collector−Emitter Sustaining Voltage (Note 1)

(IC = 0.03 Adc, IB = 0)

BD136G

BD138G

BD140G

BVCEO

45

60

80

−

Vdc

Collector Cutoff Current

(VCB = 30 Vdc, IE = 0)

(VCB = 30 Vdc, IE = 0, TC = 125 _C)

ICBO

−

0.1

10

mAdc

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)

IEBO

−

10

mAdc

DC Current Gain

(IC = 0.005 A, VCE = 2 V)

(IC = 0.15 A, VCE = 2 V)

(IC = 0.5 A, VCE = 2 V)

hFE*

25

40

25

−

250

−

Collector−Emitter Saturation Voltage (Note 1)

(IC = 0.5 Adc, IB = 0.05 Adc)

VCE(sat)*

−

0.5

Vdc

Base−Emitter On Voltage (Note 1)

(IC = 0.5 Adc, VCE = 2.0 Vdc)

VBE(on)*

−

1

Vdc

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

1. Pulse Test: Pulse Width

≤ 300 ms, Duty Cycle ≤ 2.0%.

TYPICAL CHARACTERISTICS

Figure 1. DC Current Gain

Figure 2. Collector−Emitter Saturation Voltage

IC, COLLECTOR CURRENT (A)

10

1

0.1

0.01

0.001

10

100

1000

10

1

0.1

0.01

0.001

0

0.1

0.2

0.5

VCE = 2 V

150

°C

−55

°C

25

°C

IC/IB = 10

150

°C

−55

°C

25

°C

0.3

0.4

Аналогичный номер детали - BD136G_13

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Unisonic Technologies	BD136G-6-T60-K	136Kb / 3P	PNP SILICON TRANSISTOR
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Аналогичное описание - BD136G_13

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