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IRL40B215 датащи(PDF) 3 Page - International Rectifier |
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IRL40B215 датащи(HTML) 3 Page - International Rectifier |
3 / 10 page 3 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback April 27, 2015 IRL40B215 D S G Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 176 ––– ––– S VDS = 10V, ID = 98A Qg Total Gate Charge ––– 56 84 ID = 98A Qgs Gate-to-Source Charge ––– 15 ––– VDS = 20V Qgd Gate-to-Drain Charge ––– 30 ––– VGS = 4.5V Qsync Total Gate Charge Sync. (Qg– Qgd) ––– 26 ––– td(on) Turn-On Delay Time ––– 21 ––– ns VDD = 20V tr Rise Time ––– 110 ––– ID = 30A td(off) Turn-Off Delay Time ––– 63 ––– RG= 2.7 tf Fall Time ––– 62 ––– VGS = 4.5V Ciss Input Capacitance ––– 5225 ––– pF VGS = 0V Coss Output Capacitance ––– 651 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 460 ––– ƒ = 1.0MHz, See Fig.7 Coss eff.(ER) Effective Output Capacitance (Energy Related) ––– 777 ––– VGS = 0V, VDS = 0V to 32V Coss eff.(TR) Output Capacitance (Time Related) ––– 963 ––– VGS = 0V, VDS = 0V to 32V Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– 164 A MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current ––– ––– 656 integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– 0.9 1.2 V TJ = 25°C,IS = 98A,VGS = 0V dv/dt Peak Diode Recovery dv/dt ––– 4.3 ––– V/ns TJ = 175°C,IS = 98A,VDS = 40V trr Reverse Recovery Time ––– 27 ––– ns TJ = 25°C VDD = 34V ––– 29 ––– TJ = 125°C IF = 98A, Qrr Reverse Recovery Charge ––– 23 ––– nC TJ = 25°C di/dt = 100A/µs ––– 25 ––– TJ = 125°C IRRM Reverse Recovery Current ––– 1.5 ––– A TJ = 25°C nC |
Аналогичный номер детали - IRL40B215 |
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Аналогичное описание - IRL40B215 |
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