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BAS21PG датащи(PDF) 7 Page - NXP Semiconductors |
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BAS21PG датащи(HTML) 7 Page - NXP Semiconductors |
7 / 13 page NXP Semiconductors BAS21PG Dual isolated high-voltage switching diode BAS21PG All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved Product data sheet 9 June 2015 7 / 13 Tamb (°C) 0 50 100 150 175 125 75 25 aaa-018398 1 2 3 IF(AV) (A) 0 (1) (2) (3) (4) FR4 PCB, standard footprint; one diode loaded (1) δ = 1 (2) δ = 0.5 (3) δ = 0.2 (4) δ = 0.1 Fig. 7. Average forward current as a function of ambient temperature; typical values 11. Test information trr (1) + IF t output signal tr tp t 10 % 90 % VR input signal V = VR + IF × RS RS = 50 Ω IF D.U.T. Ri = 50 Ω SAMPLING OSCILLOSCOPE mga881 (1) IR = 1 mA Fig. 8. Reverse recovery time: test circuit and waveforms tp tcy P t 006aac658 duty cycle δ = tp tcy Fig. 9. Duty cycle definition The current ratings for the typical waveforms are calculated according to the equations: IF(AV) = IM × δ with IM defined as peak current, IRMS = IF(AV) at DC, and IRMS = IM × √δ with IRMS defined as RMS current. |
Аналогичный номер детали - BAS21PG_15 |
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Аналогичное описание - BAS21PG_15 |
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