поискавой системы для электроныых деталей |
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BAS21VD датащи(PDF) 3 Page - NXP Semiconductors |
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BAS21VD датащи(HTML) 3 Page - NXP Semiconductors |
3 / 11 page NXP Semiconductors BAS21VD High-voltage switching diodes BAS21VD All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved Product data sheet 1 August 2013 3 / 11 Symbol Parameter Conditions Min Max Unit Per device; one diode loaded [1] - 250 mW Ptot total power dissipation Tamb ≤ 25 °C [2] - 295 mW Tstg storage temperature -65 150 °C Tj junction temperature - 150 °C Tamb ambient temperature -65 150 °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Per device; one diode loaded [1] - - 500 K/W Rth(j-a) thermal resistance from junction to ambient in free air [2] - - 425 K/W Rth(j-sp) thermal resistance from junction to solder point [3] - - 140 K/W [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. [3] Soldering point of cathode tab. 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Per diode IF = 100 mA; Tamb = 25 °C - - 1 V VF forward voltage IF = 200 mA; Tamb = 25 °C - - 1.25 V VR = 200 V; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C - 25 100 nA IR reverse current VR = 200 V; Tj = 150 °C - - 100 µA Cd diode capacitance f = 1 MHz; VR = 0 V; Tamb = 25 °C - 0.6 5 pF trr reverse recovery time IF = 30 mA; IR = 30 mA; Tamb = 25 °C; RL = 100 Ω; IR(meas) = 3 mA - 16 50 ns |
Аналогичный номер детали - BAS21VD_15 |
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Аналогичное описание - BAS21VD_15 |
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