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BAS32L датащи(PDF) 1 Page - NXP Semiconductors |
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BAS32L датащи(HTML) 1 Page - NXP Semiconductors |
1 / 11 page 1. Product profile 1.1 General description Single high-speed switching diode, fabricated in planar technology, and encapsulated in a small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) package. 1.2 Features and benefits High switching speed: trr ≤ 4ns Reverse voltage: VR ≤ 75 V Repetitive peak reverse voltage: VRRM ≤ 100 V Repetitive peak forward current: IFRM ≤ 450 mA Small hermetically sealed glass SMD package 1.3 Applications High-speed switching Reverse polarity protection 1.4 Quick reference data [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] When switched from IF = 10 mA to IR =10mA; RL = 100 Ω; measured at IR =1mA. BAS32L High-speed switching diode Rev. 7 — 20 January 2011 Product data sheet Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit IF forward current [1] -- 200 mA IFRM repetitive peak forward current -- 450 mA VR reverse voltage - - 75 V VF forward voltage IF = 100 mA - - 1000 mV trr reverse recovery time [2] -- 4 ns |
Аналогичный номер детали - BAS32L_15 |
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Аналогичное описание - BAS32L_15 |
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