NXP Semiconductors

BAT754L

Schottky barrier triple diode

BAT754L

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© NXP B.V. 2012. All rights reserved

Product data sheet

22 November 2012

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2. Pinning information

Table 2.

Pinning information

Pin

Symbol Description

Simplified outline

Graphic symbol

1

A1

anode (diode 1)

2

A2

anode (diode 2)

3

A3

anode (diode 3)

4

K3

cathode (diode 3)

5

K2

cathode (diode 2)

6

K1

cathode (diode 1)

1

3

2

4

5

6

TSSOP6 (SOT363)

K1

A1

K2

A2

K3

A3

aaa-005704

3. Ordering information

Table 3.

Ordering information

Package

Type number

Name

Description

Version

BAT754L

TSSOP6

plastic surface-mounted package; 6 leads

SOT363

4. Marking

Table 4.

Marking codes

Type number

Marking code

[1]

BAT754L

L1%

[1] % = placeholder for manufacturing site code

5. Limiting values

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Per diode

reverse voltage

-

30

V

forward current

-

200

mA

-

300

mA

non-repetitive peak forward

current

-

600

mA

junction temperature

-

125

°C

ambient temperature

-55

125

°C