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BYC10-600CT датащи(PDF) 2 Page - NXP Semiconductors |
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BYC10-600CT датащи(HTML) 2 Page - NXP Semiconductors |
2 / 8 page NXP Semiconductors Product specification Rectifier diode BYC10-600CT ultrafast, low switching loss FEATURES SYMBOL QUICK REFERENCE DATA • Dual diode V R = 600 V • Extremely fast switching • Low reverse recovery current V F ≤ 1.75 V • Low thermal resistance • Reduces switching losses in I O(AV) = 10 A associated MOSFET t rr = 19 ns (typ) APPLICATIONS PINNING SOT78 (TO220AB) • Active power factor correction PIN DESCRIPTION • Half-bridge lighting ballasts • Half-bridge/ full-bridge switched 1 anode 1 mode power supplies. 2 cathode The BYC10-600CT is supplied in the SOT78 (TO220AB) 3 anode 2 conventional leaded package. tab cathode LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V RRM Peak repetitive reverse voltage - 600 V V RWM Crest working reverse voltage - 600 V V R Continuous reverse voltage T mb ≤ 110 ˚C - 500 V I O(AV) Average output current (both δ = 0.5; with reapplied V RRM(max); - 10 A diodes conducting) T mb ≤ 50 ˚C1 I FRM Repetitive peak forward current δ = 0.5; with reapplied V RRM(max); - 10 A per diode T mb ≤ 50 ˚C1 I FSM Non-repetitive peak forward t = 10 ms - 40 A current per diode t = 8.3 ms - 44 A sinusoidal; T j = 150˚C prior to surge with reapplied V RWM(max) T stg Storage temperature -40 150 ˚C T j Operating junction temperature - 150 ˚C THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th j-mb Thermal resistance junction to per diode - - 2.5 K/W mounting base both diodes - - 2.2 K/W R th j-a Thermal resistance junction to in free air. - 60 - K/W ambient k a1 a2 13 2 12 3 tab 1 T mb(max) limited by thermal runaway March 2001 1 Rev 1.200 |
Аналогичный номер детали - BYC10-600CT_15 |
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Аналогичное описание - BYC10-600CT_15 |
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