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IRF4104PBF датащи(PDF) 1 Page - International Rectifier |
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IRF4104PBF датащи(HTML) 1 Page - International Rectifier |
1 / 12 page 07/23/10 www.irf.com 1 HEXFET® Power MOSFET VDSS = 40V RDS(on) = 5.5mΩ ID = 75A S D G Description l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Features IRF4104PbF IRF4104SPbF IRF4104LPbF D2Pak IRF4104SPbF TO-220AB IRF4104PbF TO-262 IRF4104LPbF Absolute Maximum Ratings Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V A ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package limited) IDM Pulsed Drain Current PD @TC = 25°C Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V EAS (Thermally limited) Single Pulse Avalanche Energyd mJ EAS (Tested ) Single Pulse Avalanche Energy Tested Value h IAR Avalanche Current à A EAR Repetitive Avalanche Energy g mJ TJ Operating Junction and TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw i Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case ––– 1.05 °C/W RθCS Case-to-Sink, Flat Greased Surface i 0.50 ––– RθJA Junction-to-Ambient i ––– 62 RθJA Junction-to-Ambient (PCB Mount) j ––– 40 220 120 See Fig.12a, 12b, 15, 16 140 0.95 ± 20 Max. 120 84 470 75 -55 to + 175 300 (1.6mm from case ) 10 lbf yin (1.1Nym) This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitiveavalancherating.Thesefeaturescombine to make this design an extremely efficient and reliable device for use in a wide variety of applications. PD - 95468A |
Аналогичный номер детали - IRF4104PBF_15 |
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Аналогичное описание - IRF4104PBF_15 |
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