Absolute Maximum Ratings

Parameter

Units

ID @ VGS = 0V, TC = 25°C

Continuous Drain Current

3.9

ID @ VGS = 0V, TC = 100°C

Continuous Drain Current

2.5

IDM

Pulsed Drain Current ➀

16

PD @ TC = 25°C

Max. Power Dissipation

12 5

W

Linear Derating Factor

1.0

W/°C

VGS

Gate-to-Source Voltage

±20

V

EAS

Single Pulse Avalanche Energy ➁

530

mJ

IAR

Avalanche Current ➀

3.9

A

EAR

Repetitive Avalanche Energy ➀

12.5

mJ

dv/dt

Peak Diode Recovery dv/dt ➂

1.0

V/ns

T J

Operating Junction

-55 to 150

TSTG

Storage Temperature Range

Lead Temperature

300 (0.063 in. (1.6mm) from case for 10s)

Weight

11.5(typical)

g

PD -90575

The HEXFET



technology is the key to International

Rectifier’s advanced line of power MOSFET transistors.

The efficient geometry and unique processing of this latest

“State of the Art” design achieves: very low on-state resis-

tance combined with high transconductance; superior re-

verse energy and diode recovery dv/dt capability.

The HEXFET transistors also feature all of the well estab-

lished advantages of MOSFETs such as voltage control,

very fast switching, ease of paralleling and temperature

stability of the electrical parameters.

They are well suited for applications such as switching

power supplies, motor controls, inverters, choppers, audio

amplifiers and high energy pulse circuits.

A

REPETITIVE AVALANCHE AND dv/dt RATED

IRFAG40

HEXFET



TRANSISTORS

THRU-HOLE (TO-204AA/AE)

01/24/01

www.irf.com

1

1000V, N-CHANNEL

TO-3

Product Summary

Part Number

BVDSS

IRFAG40

1000V

3.5

Ω

3.9Α

Features:

For footnotes refer to the last page