IRFE420, JANTX2N6794U, JANTXV2N6794U

2

www.irf.com

For footnotes refer to the last page

Note: Corresponding Spice and Saber models are available on International Rectifier Website.

Parameter

Min

Typ Max Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

500

—

—

V

VGS = 0V, ID = 1.0mA

∆BVDSS/∆TJ Temperature Coefficient of Breakdown —

0.43

—

V/°C

Reference to 25°C, ID = 1.0mA

Voltage

RDS(on)

Static Drain-to-Source On-State

—

—

3.0

VGS = 10V, ID = 0.88A„

Resistance

—

—

3.1

VGS = 10V, ID = 1.4A „

VGS(th)

Gate Threshold Voltage

2.0

—

4.0

V

VDS = VGS, ID = 250µA

gfs

Forward Transconductance

1.0

—

—

VDS > 15V, IDS = 0.88A„

IDSS

Zero Gate Voltage Drain Current

—

—

25

VDS = 400V, VGS = 0V

—

—

250

VDS = 400V

VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Leakage Forward

—

—

100

VGS = 20V

IGSS

Gate-to-Source Leakage Reverse

—

—

-100

VGS = -20V

Qg

Total Gate Charge

—

—

25

VGS = 10V, ID = 1.4A

Qgs

Gate-to-Source Charge

—

—

6.0

nC

VDS = 250V

Qgd

Gate-to-Drain (‘Miller’) Charge

—

—

18

Turn-On Delay Time

—

—

40

VDD = 225V, ID = 1.4A

tr

Rise Time

—

—

30

VGS = 10V, RG = 7.5Ω,

Turn-Off Delay Time

—

—

60

tf

Fall Time

—

—

35

LS + LD

Total Inductance

—

6.1

—

Ciss

Input Capacitance

—

350

VGS = 0V, VDS = 25V

Coss

Output Capacitance

—

80

—

pF

f = 1.0MHz

Crss

Reverse Transfer Capacitance

—

35

—

nA

nH

ns

µA

Ω

Measured from the center of

drain pad to center of source

pad

S

Thermal Resistance

Parameter

Min Typ Max Units

Test Conditions

RthJC

Junction to Case

—

—

8.93

RthJ-PCB

Junction to PC Board

—

—

26

Soldered to a copper clad PC board

°C/W

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

IS

Continuous Source Current (Body Diode)

—

—

1.4

ISM

Pulse Source Current (Body Diode)



—

—

5.6

VSD Diode Forward Voltage

—

—

1.2

V

trr

Reverse Recovery Time

—

—

900

ns

Tj = 25°C, IF = 1.4A, di/dt ≤ 100A/µs

QRR Reverse Recovery Charge

—

—

5.9

µC

VDD ≤ 50V „

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

A