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IRFE9210 датащи(PDF) 2 Page - International Rectifier

номер детали IRFE9210
подробное описание детали  Simple Drive Requirements
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производитель  IRF [International Rectifier]
домашняя страница  http://www.irf.com
Logo IRF - International Rectifier

IRFE9210 датащи(HTML) 2 Page - International Rectifier

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IRFE9210
2
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Thermal Resistance
Parameter
Min Typ Max
Units
Test Conditions
RthJC
Junction to Case
1 1
RthJ-PCB
Junction to PC Board
27"""
Soldered to a copper clad PC board
°C/W
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ
Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
-1.3
ISM
Pulse Source Current (Body Diode) ➀
-5.2
VSD
Diode Forward Voltage
-5.8
V
Tj = 25°C, IS = -1.3A, VGS = 0V ➃
trr
Reverse Recovery Time
3 0 0
nS
Tj = 25°C, IF = -1.3A, di/dt ≤-100A/µs
QRR
Reverse Recovery Charge
3.0
µc
VDD ≤ -50V ➃
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
For footnotes refer to the last page
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Typ
Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
-200
V
VGS = 0V, ID = -1.0mA
∆BVDSS/∆TJ Temperature Coefficient of Breakdown
-0.22
V/°C
Reference to 25°C, ID = -1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
3.0
VGS = -10V, ID = -0.84A➃
Resistance
3.45
VGS = -10V, ID = -1.3A ➃
VGS(th)
Gate Threshold Voltage
-2.0
- 4.0
V
VDS = VGS, ID = -250µA
gfs
Forward Transconductance
0.7
S ( )
VDS > -15V, IDS = -0.84A➃
IDSS
Zero Gate Voltage Drain Current
-25
VDS= -160V, VGS= 0V
-250
VDS =-160V
VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Leakage Forward
-100
VGS =-20V
IGSS
Gate-to-Source Leakage Reverse
1 0 0
VGS =20V
Qg
Total Gate Charge
8.9
VGS =-10V, ID= -1.3A
Qgs
Gate-to-Source Charge
2.1
nC
VDS =-100V
Qgd
Gate-to-Drain (‘Miller’) Charge
3.9
td(on)
Turn-On Delay Time
1 5
VDD =-100V, ID = -1.3A,
t r
Rise Time
2 5
RG =7.5Ω
td(off)
Turn-Off Delay Time
4 0
tf
Fall Time
1 5
LS + LD
Total Inductance
6.1
Ciss
Input Capacitance
1 7 0
VGS = 0V, VDS = -25V
Coss
Output Capacitance
5 4
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
1 7
nA
nH
ns
µA
Measured from the center of
drain pad to center of source
pad


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