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IRFEA240 датащи(PDF) 2 Page - International Rectifier

номер детали IRFEA240
подробное описание детали  Simple Drive Requirements
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производитель  IRF [International Rectifier]
домашняя страница  http://www.irf.com
Logo IRF - International Rectifier

IRFEA240 датащи(HTML) 2 Page - International Rectifier

  IRFEA240 Datasheet HTML 1Page - International Rectifier IRFEA240 Datasheet HTML 2Page - International Rectifier IRFEA240 Datasheet HTML 3Page - International Rectifier IRFEA240 Datasheet HTML 4Page - International Rectifier IRFEA240 Datasheet HTML 5Page - International Rectifier IRFEA240 Datasheet HTML 6Page - International Rectifier IRFEA240 Datasheet HTML 7Page - International Rectifier  
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IRFEA240
2
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Thermal Resistance
Parameter
Min Typ Max
Units
Test Conditions
RthJC
Junction-to-Case
2.5
°C/W
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
11
ISM
Pulse Source Current (Body Diode) Œ
——
44
VSD
Diode Forward Voltage
1.5
V
Tj = 25°C, IS = 11A, VGS = 0V 
trr
Reverse Recovery Time
470
nS
Tj = 25°C, IF = 11A, di/dt ≤ 100A/µs
QRR Reverse Recovery Charge
6.5
µCVDD ≤ 25V 
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
200
V
VGS = 0V, ID = 1mA
∆BVDSS/∆TJ Temperature Coefficient of Breakdown
0.25
V/°C
Reference to 25°C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
0.18
VGS = 10V, ID = 11A
Resistance
VGS(th)
Gate Threshold Voltage
2.0
4.0
V
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
6.0
S ( )VDS = 25V, IDS = 11A 
IDSS
Zero Gate Voltage Drain Current
25
VDS= 160V ,VGS=0V
250
VDS = 160V,
VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Leakage Forward
100
VGS = 20V
IGSS
Gate-to-Source Leakage Reverse
-100
VGS = -20V
Qg
Total Gate Charge
84
VGS =10V, ID = 11A
Qgs
Gate-to-Source Charge
17
nC
VDS = 100V
Qgd
Gate-to-Drain (‘Miller’) Charge
41
td(on)
Turn-On Delay Time
25
VDD = 100V, ID = 11A
tr
Rise Time
196
RG = 9.1Ω
td(off)
Turn-Off Delay Time
80
tf
Fall Time
130
LS + LD
Total Inductance
6.1
Measured from the center of
drain pad to center of source pad
Ciss
Input Capacitance
1340
VGS = 0V, VDS = 25V
Coss
Output Capacitance
434
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
134
nA

nH
ns
µA


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