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BUK6E2R3-40C датащи(PDF) 7 Page - NXP Semiconductors

номер детали BUK6E2R3-40C
подробное описание детали  N-channel TrenchMOS intermediate level FET
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производитель  PHILIPS [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BUK6E2R3-40C датащи(HTML) 7 Page - NXP Semiconductors

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BUK6E2R3-40C
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 18 August 2010
7 of 15
NXP Semiconductors
BUK6E2R3-40C
N-channel TrenchMOS intermediate level FET
Source-drain diode
VSD
source-drain voltage
IS =25A; VGS =0V; Tj =25°C;
see Figure 15
-0.8
1.2
V
trr
reverse recovery time
IS =20A; dIS/dt = -100 A/µs; VGS =0V;
VDS =25V
-63
-
ns
Qr
recovered charge
-
127
-
nC
Table 6.
Characteristics …continued
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Fig 5.
Forward transconductance as a function of
drain current; typical values
Fig 6.
Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 7.
Drain-source on-state resistance as a function
of gate-source voltage; typical values
Fig 8.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values
003aae251
0
50
100
150
200
250
0
2040
6080
100
ID (A)
gfs
(S)
003aae248
0
20
40
60
80
100
0
0.2
0.4
0.6
0.8
1
VDS(V)
ID
(A)
3.8
4
5
3.3
10
VGS(V) = 3.2
3.4
3.6
003aae282
0
2
4
6
8
0
5
10
15
20
VGS (V)
RDSon
(m
Ω)
003aae249
0
20
40
60
80
012
34
VGS(V)
ID
(A)
Tj = 25 °C
Tj = 175 °C


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