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UC1845A-SP датащи(PDF) 4 Page - Texas Instruments

номер детали UC1845A-SP
подробное описание детали  UC1845A-SP QML Class V, Radiation Hardened Current-Mode PWM Controller
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производитель  TI [Texas Instruments]
домашняя страница  http://www.ti.com
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UC1845A-SP датащи(HTML) 4 Page - Texas Instruments

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UC1845A-SP
SLUSC14 – MAY 2015
www.ti.com
8 Specifications
8.1 Absolute Maximum Ratings
(1) (2)
over operating free-air temperature (unless otherwise noted)
MIN
MAX
UNIT
VCC
Supply voltage, low-impedance source
30
V
VI
Input voltage (VFB, ISENSE)
–0.3
6.3
V
Supply current
Self limiting
IO
Output current
±1
A
Error amplifier output sink current
10
mA
Output energy (capacitive load)
5
μJ
PD
Power dissipation (TA = 25°C)
1
W
TJ
Junction temperature
150
°C
Tlead
Lead temperature (soldering, 10 s)
300
°C
Tstg
Storage temperature
–65
150
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2)
All voltages are with respect to ground. Currents are positive in, negative out of the specified terminal.
8.2 ESD Ratings
VALUE
UNIT
V(ESD)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
±4000
V
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
8.3 Recommended Operating Conditions
over operating free-air temperature range (TA = TJ = –55°C to 125°C), unless otherwise noted.
MIN
MAX
UNIT
VCC
Supply voltage
12
25
V
Sink/source output current (continuous or time average)
0
200
mA
Reference load current
0
20
mA
8.4 Thermal Information
UC1845A-SP
THERMAL METRIC(1)
JG (CDIP)
FK (LCCC)
HKU (CFP)
UNIT
8 PINS
20 PINS
10 PINS
RθJA
Junction-to-ambient thermal resistance
103
51.9
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
9.6
9.0
6.6
°C/W
RθJB
Junction-to-board thermal resistance
69.2
31.5
°C/W
ψJT
Junction-to-top characterization parameter
13.9
5.42
°C/W
ψJB
Junction-to-board characterization parameter
73
31
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
4
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