BUK6C3R3-75C

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Product data sheet

Rev. 3 — 18 January 2012

5 of 13

NXP Semiconductors

BUK6C3R3-75C

N-channel TrenchMOS intermediate level FET

6.

Characteristics

Table 6.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

drain-source

breakdown voltage

75

--V

68

-

-

V

gate-source threshold

voltage

see Figure 9; see Figure 10

1.8

2.3

2.8

V

gate-source threshold

voltage

see Figure 10

0.8

--V

see Figure 10

--3.3

V

drain leakage current

-

0.04

1

µA

-

-

500

µA

gate leakage current

-

2

100

nA

-

2

100

nA

drain-source on-state

resistance

see Figure 11

-

2.85

3.4

m

Ω

see Figure 11

-

3.35

4.3

m

Ω

see Figure 11

-3.7

5.1

m

Ω

see Figure 11; see Figure 12

--9.2

m

Ω

Dynamic characteristics

total gate charge

see Figure 13; see Figure 14

-

253

-

nC

see Figure 13; see Figure 14

-

140

-

nC

gate-source charge

see Figure 13; see Figure 14

-45

-nC

gate-drain charge

-

76

-

nC

input capacitance

-

11840

15800

pF

output capacitance

-

873

1050

pF

reverse transfer

capacitance

-

546

750

pF

turn-on delay time

-45

-ns

rise time

-

217

-

ns

turn-off delay time

-

384

-

ns

fall time

-

165

-

ns

Source-drain diode

source-drain voltage

see Figure 16

-0.8

1.2

V

reverse recovery time

-63

-ns

recovered charge

-

165

-

nC