поискавой системы для электроныых деталей |
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BUK7631-100E датащи(PDF) 5 Page - NXP Semiconductors |
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BUK7631-100E датащи(HTML) 5 Page - NXP Semiconductors |
5 / 13 page NXP Semiconductors BUK7631-100E N-channel TrenchMOS standard level FET BUK7631-100E All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved Product data sheet 5 October 2012 5 / 13 003aah168 single shot 0.2 0.1 0.05 10-3 10-2 10-1 1 10 10-6 10-5 10-4 10-3 10-2 10-1 1 tp(s) Zth(j-mb) (K/W) δ = 0.5 0.02 tp T P t tp T δ = Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics ID = 250 µA; VGS = 0 V; Tj = 25 °C 100 - - V V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = -55 °C 90 - - V ID = 1 mA; VDS = VGS; Tj = 25 °C; Fig. 9; Fig. 10 2.4 3 4 V ID = 1 mA; VDS = VGS; Tj = 175 °C; Fig. 9 1 - - V VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Tj = -55 °C; Fig. 9 - - 4.5 V VDS = 100 V; VGS = 0 V; Tj = 25 °C - 0.04 1 µA IDSS drain leakage current VDS = 100 V; VGS = 0 V; Tj = 175 °C - - 500 µA VGS = 20 V; VDS = 0 V; Tj = 25 °C - 2 100 nA IGSS gate leakage current VGS = -20 V; VDS = 0 V; Tj = 25 °C - 2 100 nA VGS = 10 V; ID = 10 A; Tj = 25 °C; Fig. 11 - 24.3 31 mΩ RDSon drain-source on-state resistance VGS = 10 V; ID = 10 A; Tj = 175 °C; Fig. 11; Fig. 12 - - 84 mΩ Dynamic characteristics QG(tot) total gate charge - 29.4 - nC QGS gate-source charge - 5.1 - nC QGD gate-drain charge ID = 10 A; VDS = 80 V; VGS = 10 V; Tj = 25 °C; Fig. 13; Fig. 14 - 10.7 - nC |
Аналогичный номер детали - BUK7631-100E_15 |
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Аналогичное описание - BUK7631-100E_15 |
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