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BUK7631-100E датащи(PDF) 5 Page - NXP Semiconductors

номер детали BUK7631-100E
подробное описание детали  N-channel TrenchMOS standard level FET
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производитель  PHILIPS [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BUK7631-100E датащи(HTML) 5 Page - NXP Semiconductors

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NXP Semiconductors
BUK7631-100E
N-channel TrenchMOS standard level FET
BUK7631-100E
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
5 October 2012
5 / 13
003aah168
single shot
0.2
0.1
0.05
10-3
10-2
10-1
1
10
10-6
10-5
10-4
10-3
10-2
10-1
1
tp(s)
Zth(j-mb)
(K/W)
δ = 0.5
0.02
tp
T
P
t
tp
T
δ =
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
7. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
ID = 250 µA; VGS = 0 V; Tj = 25 °C
100
-
-
V
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = -55 °C
90
-
-
V
ID = 1 mA; VDS = VGS; Tj = 25 °C;
Fig. 9; Fig. 10
2.4
3
4
V
ID = 1 mA; VDS = VGS; Tj = 175 °C;
Fig. 9
1
-
-
V
VGS(th)
gate-source threshold
voltage
ID = 1 mA; VDS = VGS; Tj = -55 °C;
Fig. 9
-
-
4.5
V
VDS = 100 V; VGS = 0 V; Tj = 25 °C
-
0.04
1
µA
IDSS
drain leakage current
VDS = 100 V; VGS = 0 V; Tj = 175 °C
-
-
500
µA
VGS = 20 V; VDS = 0 V; Tj = 25 °C
-
2
100
nA
IGSS
gate leakage current
VGS = -20 V; VDS = 0 V; Tj = 25 °C
-
2
100
nA
VGS = 10 V; ID = 10 A; Tj = 25 °C;
Fig. 11
-
24.3
31
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 10 A; Tj = 175 °C;
Fig. 11; Fig. 12
-
-
84
Dynamic characteristics
QG(tot)
total gate charge
-
29.4
-
nC
QGS
gate-source charge
-
5.1
-
nC
QGD
gate-drain charge
ID = 10 A; VDS = 80 V; VGS = 10 V;
Tj = 25 °C; Fig. 13; Fig. 14
-
10.7
-
nC


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