BUK7509-75A_15 datasheet(1/14 Pages) PHILIPS

номер детали	BUK7509-75A

подробное описание детали	N-channel TrenchMOS standard level FET

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производитель	PHILIPS [NXP Semiconductors]

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1.

Product profile

1.1 General description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product has been designed and qualified to

the appropriate AEC standard for use in automotive critical applications.

1.2 Features and benefits

AEC Q101 compliant

Low conduction losses due to low

on-state resistance

Suitable for standard level gate drive

sources

Suitable for thermally demanding

environments due to 175 °C rating

1.3 Applications

12 V, 24 V and 42 V loads

Automotive and general purpose

power switching

Motors, lamps and solenoids

1.4 Quick reference data

BUK7509-75A

N-channel TrenchMOS standard level FET

Rev. 03 — 21 February 2011

Product data sheet

Table 1.

Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VDS

drain-source voltage

Tj ≥ 25 °C; Tj ≤ 175 °C

-

75

V

ID

drain current

VGS =10V; Tmb =25°C;

see Figure 1; see Figure 3

--75

A

Ptot

total power dissipation

Tmb = 25 °C; see Figure 2

--230

W

Static characteristics

RDSon

drain-source on-state

resistance

VGS =10V; ID =25 A;

Tj =175 °C; see Figure 12;

see Figure 13

--18.9

m

Ω

VGS =10V; ID =25 A;

Tj = 25 °C; see Figure 12;

see Figure 13

-7.7

9

m

Ω

Avalanche ruggedness

EDS(AL)S

non-repetitive

drain-source avalanche

energy

ID =75 A; Vsup ≤ 75 V;

RGS =50 Ω; VGS =10V;

Tj(init) = 25 °C; unclamped

--560

mJ

Аналогичный номер детали - BUK7509-75A_15

производитель	номер детали	датащи	подробное описание детали
NXP Semiconductors	BUK7509-75A	343Kb / 15P	TrenchMOS standard level FET Rev. 02-06 November 2000
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