BUK7613-75B_15 datasheet(5/13 Pages) PHILIPS

номер детали	BUK7613-75B

подробное описание детали	N-channel TrenchMOS standard level FET

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BUK7613-75B

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Product data sheet

Rev. 3 — 27 December 2011

5 of 13

NXP Semiconductors

BUK7613-75B

N-channel TrenchMOS standard level FET

6.

Characteristics

Table 6.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V(BR)DSS

drain-source breakdown voltage ID = 0.25 mA; VGS =0V; Tj = 25 °C

75

--V

ID = 0.25 mA; VGS =0V; Tj = -55 °C

70

-

V

VGS(th)

gate-source threshold voltage

ID =1mA; VDS =VGS; Tj =25°C;

see Figure 10

234V

ID =1mA; VDS =VGS; Tj = 175 °C;

see Figure 10

1

--V

ID =1mA; VDS =VGS; Tj =-55 °C;

see Figure 10

--4.4

V

IDSS

drain leakage current

VDS =75V; VGS =0V; Tj = 175 °C

-

500

µA

VDS =75V; VGS =0V; Tj = 25 °C

-

0.02

1

µA

IGSS

gate leakage current

VGS =20V; VDS =0V; Tj = 25 °C

-

2

100

nA

VGS =-20 V; VDS =0V; Tj = 25 °C

-

2

100

nA

RDSon

drain-source on-state resistance VGS =10V; ID =25 A; Tj = 175 °C;

see Figure 11; see Figure 12

--27

m

Ω

VGS =10V; ID =25 A; Tj =25°C;

see Figure 11; see Figure 12

-11.7

13

m

Ω

Dynamic characteristics

QG(tot)

total gate charge

ID =25 A; VDS =60V; VGS =10V;

Tj =25°C; see Figure 13

-40

-nC

QGS

gate-source charge

-

8

-

nC

QGD

gate-drain charge

-

15

-

nC

Ciss

input capacitance

VGS =0V; VDS =25V; f=1MHz;

Tj =25°C; see Figure 14

-

1983

2644

pF

Coss

output capacitance

-

322

386

pF

Crss

reverse transfer capacitance

-

155

212

pF

td(on)

turn-on delay time

VDS =30V; RL =1.2 Ω; VGS =10V;

RG(ext) =10 Ω; Tj =25°C

-18

-ns

tr

rise time

-

36

-

ns

td(off)

turn-off delay time

-

55

-

ns

tf

fall time

-

26

-

ns

LD

internal drain inductance

from upper edge of drain mounting

base to centre of die ; Tj =25°C

-2.5

-nH

from drain lead 6 mm from package to

centre of die ; Tj =25°C

-4.5

-nH

LS

internal source inductance

from source lead 6 mm from package

to source bond pad ; Tj =25°C

-7.5

-nH

Source-drain diode

VSD

source-drain voltage

IS =15A; VGS =0 V; Tj =25°C;

see Figure 15

-

0.85

1.2

V

trr

reverse recovery time

IS =20A; dIS/dt = -100 A/µs;

VGS =-10 V; VDS =30V; Tj =20°C

-74

-ns

Qr

recovered charge

IS =20A; dIS/dt = -100 A/µs;

VGS =-10 V; VDS =30V; Tj =25°C

-94

-nC

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