UTCBU508AFI

NPN EPITAXIAL SILICON TRANSISTOR

1

QW-R214-001,A

SILICON DIFFUSED POWER

TRANSISTOR

DESCRIPTION

The UTC BU508AFI is high voltage, high speed switching

NPN transistors in a plastic envelope, primarily for use in

horizontal deflection circuites of colour television receivers.

Features

* TV color horizontal deflection.

* With TO-3PML fully isolated package.

Absolute Maximum Rating Tc=25

°C

PARAMETER

SYMBOL

VALUE

UNIT

1500

V

700

V

10

V

Collector peak current

Icp

15

A

Collector current

Ic

8

A

Collector power dissipation

Pc

60

W

Junction temperature

Tj

150

°C

Storage temperature

Tstg

-65~150

°C

ELECTRICAL CHARACTERISTICS Tc=25

°C

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

MAX

UNIT

Collector-base cut off current

2.0

mA

Emitter-base cut off current

100

uA

Collector-emitter Sustaining voltage

700

V

Emitter-base breakdown voltage

10

V

Collector-emitter saturation voltage

1.0

V

Base-emitter saturation voltage

1.3

V

Base current peak value

6

30

TO-3PML

1.

BASE

2.

COLLECTOR

3.

EMITTER

1

2

3