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BUK663R5-55C датащи(PDF) 1 Page - NXP Semiconductors

номер детали BUK663R5-55C
подробное описание детали  N-channel TrenchMOS intermediate level FET
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производитель  PHILIPS [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BUK663R5-55C датащи(HTML) 1 Page - NXP Semiconductors

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1.
Product profile
1.1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)
in a plastic package using advanced TrenchMOS technology. This product has been
designed and qualified to the appropriate AEC Q101 standard for use in high performance
automotive applications.
1.2 Features and benefits
AEC Q101 compliant
Suitable for standard and logic level
gate drive sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V and 24 V Automotive systems
Electric and electro-hydraulic power
steering
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power
switching
1.4 Quick reference data
BUK663R5-55C
N-channel TrenchMOS intermediate level FET
Rev. 2 — 23 December 2010
Product data sheet
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source
voltage
Tj ≥ 25 °C; Tj ≤ 175 °C
--55
V
ID
drain current
VGS =10V; Tmb =25°C;
see Figure 1
[1]
--120
A
Ptot
total power
dissipation
Tmb = 25 °C; see Figure 2
--263
W
Static characteristics
RDSon
drain-source
on-state
resistance
VGS =10V; ID =25A;
Tj =25°C; see Figure 12
-
2.86
3.4
m


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