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BUK7606-55B датащи(PDF) 6 Page - NXP Semiconductors |
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BUK7606-55B датащи(HTML) 6 Page - NXP Semiconductors |
6 / 14 page BUK7606-55B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 21 June 2010 6 of 14 NXP Semiconductors BUK7606-55B N-channel TrenchMOS standard level FET 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID =0.25mA; VGS =0V; Tj = 25 °C 55 --V ID =0.25mA; VGS =0V; Tj = -55 °C 50 - - V VGS(th) gate-source threshold voltage ID =1mA; VDS =VGS; Tj =-55 °C; see Figure 10 --4.4 V ID =1mA; VDS =VGS; Tj =25°C; see Figure 10 234V ID =1mA; VDS =VGS; Tj = 175 °C; see Figure 10 1 --V IDSS drain leakage current VDS =55V; VGS =0V; Tj = 25 °C - 0.02 1 µA VDS =55V; VGS =0V; Tj = 175 °C - - 500 µA IGSS gate leakage current VDS =0V; VGS =20V; Tj = 25 °C - 2 100 nA VDS =0V; VGS =-20 V; Tj = 25 °C - 2 100 nA RDSon drain-source on-state resistance VGS =10V; ID =25A; Tj = 175 °C; see Figure 11; see Figure 12 --12 m Ω VGS =10V; ID =25A; Tj =25°C; see Figure 11; see Figure 12 -5.1 6 m Ω Dynamic characteristics QG(tot) total gate charge ID =25A; VDS =44V; VGS =10V; Tj =25°C; see Figure 13 -64 -nC QGS gate-source charge - 14 - nC QGD gate-drain charge - 19 - nC Ciss input capacitance VGS =0V; VDS =25V; f=1MHz; Tj =25°C; see Figure 14 - 3825 5100 pF Coss output capacitance - 783 940 pF Crss reverse transfer capacitance - 235 322 pF td(on) turn-on delay time VDS =30V; RL =1.2 Ω; VGS =10V; RG(ext) =10 Ω; Tj =25 °C -30 -ns tr rise time VDS =30V; RL =1.2 Ω; VGS =10V; RG(ext) =10 Ω; Tj =30 °C -46 -ns td(off) turn-off delay time VDS =30V; RL =1.2 Ω; VGS =10V; RG(ext) =10 Ω; Tj =25 °C -85 -ns tf fall time - 39 - ns LD internal drain inductance from drain lead 6 mm from package to centre of die; Tj =25°C -4.5 -nH from upper edge of drain mounting base to centre of die; Tj =25°C -2.5 -nH LS internal source inductance from source lead to source bond pad; Tj =25°C -7.5 -nH Source-drain diode VSD source-drain voltage IS =25A; VGS =0V; Tj =25°C; see Figure 15 - 0.85 1.2 V trr reverse recovery time IS =20A; dIS/dt = -100 A/µs; VGS =-10 V; VDS =30 V; Tj =25°C -73 -ns Qr recovered charge - 82 - nC |
Аналогичный номер детали - BUK7606-55B_15 |
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Аналогичное описание - BUK7606-55B_15 |
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