поискавой системы для электроныых деталей |
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BUK7606-55B датащи(PDF) 8 Page - NXP Semiconductors |
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BUK7606-55B датащи(HTML) 8 Page - NXP Semiconductors |
8 / 14 page BUK7606-55B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 21 June 2010 8 of 14 NXP Semiconductors BUK7606-55B N-channel TrenchMOS standard level FET Fig 9. Transfer characteristics: drain current as a function of gate-source voltage; typical values Fig 10. Gate-source threshold voltage as a function of junction temperature Fig 11. Drain-source on-state resistance as a function of drain current; typical values Fig 12. Normalized drain-source on-state resistance factor as a function of junction temperature 03nl91 0 25 50 75 100 0246 VGS (V) ID (A) Tj = 175 °C Tj = 25 °C Tj (°C) −60 180 120 060 03aa32 2 3 1 4 5 VGS(th) (V) 0 max typ min 03nl94 4 6 8 10 12 14 0 70 140 210 280 350 ID (A) RDSon (m Ω) Label is VGS (V) 6 7 8 10 20 03ne89 0 0.5 1 1.5 2 -60 0 60 120 180 Tj ( °C) a |
Аналогичный номер детали - BUK7606-55B_15 |
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Аналогичное описание - BUK7606-55B_15 |
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